Effect of growth temperature on the characteristics of ZnO films grown on Si (111) substrates by metal-organic chemical vapor deposition Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasmaenhanced metalorganic chemical vapor deposition Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition J. Vac. Sci. Technol. A 21, 979 (2003); 10.1116/1.1580836 Transparent and conductive Ga-doped ZnO films grown by low pressure metal organic chemical vapor deposition J.Gallium-doped ZnO films were grown on p-Si͑111͒ substrates by atmospheric pressure metal-organic chemical vapor deposition ͑AP-MOCVD͒ using diethylzinc and water as reactant gases and triethyl gallium ͑TEG͒ as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56 to 3.35 mol/ min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation ͑101͒ was obtained for the ZnO:Ga film fabricated at a flow rate of TEG = 2.79 mol/ min. This film also revealed a lowest resistivity of 4.54ϫ 10 −4 ⍀ cm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence ͑PL͒ emission recorded at 12 K demonstrated the Burstein Moss shift of PL line from 3.365 to 3.403 eV and a line broadening from 100 to 165 meV as the TEG flow rate varied from 0.56 to 2.79 mol/ min. This blueshift behavior of PL spectra from ZnO:Ga films features the degeneracy of semiconductor, which helps to recognize the enhancing of transparency and conductivity of ZnO films fabricated by AP-MOCVD using Ga-doping technique.
The structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition ͑AP-MOCVD͒ under various gas flow ratios of ͓H 2 O͔ / ͓DEZn͔ ͑VI/II ratio͒ ranging from 0.55 to 2.74 were systematically examined. Hall effect measurements exhibited an evident effect of the VI/II ratio on the conduction type of the intrinsic films. An n-type film was fabricated at the VI/II ratio= 0.55; however, p-type ZnO films with the hole concentration of the order of 10 17 cm −3 could be achieved at VI/II ratios higher than 1.0. In particular, the highest mobility of 91.6 cm 2 / V s and the lowest resistivity of 0.369 ⍀ cm have been achieved for the specimen fabricated at the VI/II ratio= 1.10. Moreover, room-temperature photoluminescence ͑PL͒ measurements demonstrated an interstitial Zn ͑Zn i ͒ donor defect related emission at 2.9 eV for the n-type film, while a Zn vacancy ͑V Zn ͒ acceptor defect related one at 3.09 eV for the p-type films. The existence of material intrinsic defects was further confirmed by low temperature PL measurements conducted at 10 K. Conclusively, the conduction type of undoped ZnO films deposited by AP-MOCVD is resolved by the VI/II ratio used, which causes the formation of various kinds of intrinsic defects, Zn i otherwise V Zn . p-type ZnO films with the hole concentration in the range of ͑1.5-3.3͒ ϫ 10 17 cm −3 can be achieved with good reproducibility by modulating a VI/II ratio the range 1.0-2.2 for the AP-MOCVD process.
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