Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

“…ZnO is a direct wide band-gap (E g ∼ 3.37 eV) semiconducting material, with a large exciton binding energy of 60 meV and possess good transparency in the visible wavelength [1,2]. These properties make the ZnO an important semiconductor for various applications in optoelectronic devices such as UV light-emitting diodes, laser diodes and photodetectors [1,3].…”

“…These properties make the ZnO an important semiconductor for various applications in optoelectronic devices such as UV light-emitting diodes, laser diodes and photodetectors [1,3]. To reach such goals, the fabrication of stable and reproducible n and p-type ZnO with excellent electrical and optical properties are very important [1,4,5]. n-type ZnO is easily available with high quality by Al [6], Ga [7] or In [8] doping.…”

Creation of Acceptor Centers in ZnO Single Crystals by Annealing in Sb Vapor

“…ZnO is a promising material as ultraviolet light-emitting diodes, laser diodes with low thresholds, , and photodetectors due to its physical properties, such as a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. − Nondoped ZnO exhibits an n-type semiconductor behavior, which is considered to be provided by certain native point defects (oxygen vacancies (V O )) and interstitial zinc (Zn i ) or hydrogen impurities according to the common accepted point of view . The fabrication of stable and reproducible p-type ZnO has been difficult due to the self-compensation, the low solubility of the acceptor dopants (typically < 10 18 cm –3 ), and the large ionization energy (170–380 meV) of all of the probable acceptor dopants. − Recently, there have been a number of reports on obtaining p-type ZnO through doping by elements of the V group such as N, , P, As, and Sb . In these reports, samples of doped ZnO were obtained as thin films by CVD/MOCVD in the case of N and As doping, by radio-frequency sputtering in the case of P, and by molecular beam epitaxy in the case of Sb.…”

“…7 The fabrication of stable and reproducible p-type ZnO has been difficult due to the selfcompensation, the low solubility of the acceptor dopants (typically < 10 18 cm −3 ), and the large ionization energy (170− 380 meV) of all of the probable acceptor dopants. 8−11 Recently, there have been a number of reports on obtaining p-type ZnO through doping by elements of the V group such as N, 12,13 P, 14 As, 15 and Sb. 16 In these reports, samples of doped ZnO were obtained as thin films by CVD/MOCVD in the case of N and As doping, by radio-frequency sputtering in the case of P, and by molecular beam epitaxy in the case of Sb.…”

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

“…Undoped ZnO is usually n-type conductive, which is associated with the presence of native point defects (e.g., oxygen vacancies (V O ) and interstitial zinc (Zn i )) [4] or hydrogen impurities [5], but the fabrication of stable and reproducible p-type ZnO has been difficult due to the self-compensation and low solubility of acceptor dopants. In recent years, several groups have reported the growth of p-type ZnO by doping group V elements N [6,7], P [8], As [9] and Sb [10]. Among the group V elements, nitrogen has been regarded as the most suitable dopant for p-type ZnO due to its similar atomic radius to that of oxygen.…”