In this paper, a side-polished fiber (SPF) coated with molybdenum diselenide (MoSe2) is proposed, and its characteristic of relative humidity (RH) sensing is investigated. It is found in the experiment that an enhancement in RH sensitivity (0.321 dB/%RH) can be achieved in a very wide RH range of 32%RH to 73%RH for the proposed MoSe2 coated SPF (MoSe2CSPF). It is also shown that the MoSe2CSPF has a rapid response of 1s and recovery time of 4s, which makes the sensor capable of monitoring human breath. The experimental results suggest MoSe2 has a promising potential in photonics applications such as all-fiber optic humidity sensing networks.
Nanoscale‐crossbar electrochemical‐metallization (ECM) type resistive‐switching random access memory (ReRAM) is considered promising candidates for next‐generation non‐volatile memory. However, performing nanoscale patterning with traditional Cu‐based ECM ReRAM is quite challenging, because Cu is difficult to control and pattern using lithography and etching. In this study, a nanoscale Cu‐based ReRAM with a Si3N4–SiO2 bi‐layer was fabricated successfully through a novel Cu chemical displacement technique (Cu‐CDT). Compared with other conventional Cu deposition techniques, the Cu‐CDT exhibits numerous advantages including simplicity, low‐temperature fabrication, low cost, and high displacement selectivity between poly‐Si and the Si3N4–SiO2 bi‐layer. Moreover, the developed nanoscale‐crossbar Cu‐CDT ReRAM device demonstrated stable switching and remarkable high‐temperature data retention. Therefore, the Cu‐CDT is an effective approach for overcoming Cu etching and patterning limitations.
There is increasing motivation to develop sensors and actuators to manage domestic electric power consumption. This article demonstrates an optical fiber sensor using a superstructure fiber grating (SFG) to measure electric power consumption. The sensor head is based on SFG encapsulated in a polymer‐half‐field metal cylinder embedded a magnetic material at measure point. The operating mechanism is that the sensor can be attracted by the induced magnetic force created by the electric power in the solenoid along one radial direction only, and responds to an axial force on the magnetic rod attached to the round plate, creating an axial attraction on the SFG. Therefore, variations in attractive force cause center‐wavelength variations in SFB and long‐period grating acts as an edge filter converting strain‐induced wavelength variation into optical power measurement. Thus, the sensor can be used to measure electric power without the use of power meter. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2438–2441, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24660
In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO 2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO 2 film and effectively improve the reliability of the conventional Cu-doped SiO 2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (~10 6 ), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device. IntroductionRecently, ReRAM (Resistive Random Access Memory) has been researched extensively as a promising candidate for the next-generation nonvolatile memory. Cu-doped SiO 2 as a resistive layer for ReRAM application has been reported to show the resistive switching behavior (1). The switching mechanism has also been proposed by the migration and accumulation of copper ions from copper electrode into the resistive layer (1-2). After several times of set/reset operations, the increment of copper ions concentration in resistive layer results in a hardly ruptured metallic filament under reset process. Thus, the concentration of copper ions in the resistive layer plays an important role in electrical properties, especially for reliability characteristics. In addition, there are many research for Cu-doped SiO 2 ReRAM device (1, 3-5), while the endurance characteristic is a lack of investigation.In this study, a novel chemical soak method is provided to fabricate a Cu-doped SiO 2 ReRAM device. Results showed that this novel chemical soak process is promising to fabricate a high performance Cu-doped SiO 2 ReRAM device. ExperimentalA new technique introduced copper into SiO 2 films by soaking the film in copper sulfate solution is successfully demonstrated in this paper. The chemical solution consists of ECS Transactions, 41 (3) 469-473 (2011) 10.1149/1.3633063 © The Electrochemical Society 469 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.215.174.8 Downloaded on 2015-06-27 to IPcopper sulfate pentahydrate and DI water. Thereamong, the molarity of copper sulfate pentahydrate is 0.4 M. The copper sulfate solution was stirred and heated to 65 o C on hot plate; meanwhile, the temperature of solution was monitored by thermograph. Samples were fabricated on prepared SiO 2 /Si-sub wafers. Firstly, a 200-nm thick TaN metal layer as the bottom electrode was deposited on the SiO 2 /Si-sub wafer by using sputtering. Then a 20-nm thick SiO 2 film was deposited by PECVD as the resistive layer for ReRAM devices. Subsequently, samples were soaked in the copper sulfate solution at 65 o C for 15 min and baked at 250 o C for 30 min in an oven for eliminating residual moisture. Finally, a 200-nm thick top TaN electrode was d...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.