Thin SiO 2 films were grown on a Ru(0001) single crystal and studied by photoelectron spectroscopy, infrared spectroscopy and scanning probe microscopy. The experimental results in combination with density functional theory calculations provide compelling evidence for the formation of crystalline, double-layer sheet silica weakly bound to a metal substrate. DOI: 10.1103/PhysRevLett.105.146104 PACS numbers: 68.35.Àp, 68.47.Gh, 68.55.Àa Silicon dioxide (SiO 2 ) plays a key role in many modern technologies and applications that range from insulating layers in integrated circuits to supports for metal and oxide clusters in catalysts. For better understanding of structureproperty relationships on silica-based materials, particularly of reduced dimensions, thin silica films grown on metal single crystal substrates are suggested as suitable model systems that allow the facile application of many ''surface science'' techniques. It has recently been shown that crystalline silica films and nanowires can be grown on Mo(112) [1][2][3][4][5]. The ultrathin film consists of a monolayer honeycomblike network of corner-sharing [SiO 4 ] tetrahedra, thus resulting in a SiO 2:5 stoichiometry of the film. The Si atoms in these films can be partly substituted by Al in the course of preparing metal supported aluminosilicate films [6], which is the first step towards experimental modeling of catalytic centers in zeolitelike materials. However, attempts to grow thicker silica films on the Mo substrates resulted in amorphous structures [7][8][9], most likely due to the formation of strong Si-O-Mo bonds at the interface that govern the growth mode [9]. Recently, the preparation of crystalline silica films on other supports such as Pd(100) [10] and Ni(111) [11] has been reported. However, the atomic structure of the films, film surface termination, and the nature of the silica-metal interface were not determined.In this Letter, we report on the preparation and the atomic structure of well-defined silica films on Ru(0001). The experimental results, obtained by photoelectron and vibrational spectroscopies and high-resolution scanning probe microscopy, are complemented by density functional theory calculations which together provide compelling evidence for the formation of a double-layer sheet silicate, with a SiO 2 stoichiometric composition, weakly bound to a metal support. The results open new perspectives for employing a ''surface science'' approach to understand the reactivity of silicate surfaces consisting of hydrophobic Si-O-Si bonds, such as those of microporous all-silica zeolites [12]. Also, these films can be used as model supports for catalytically active metal and oxide clusters [4,13].The experiments were performed in an ultrahigh vacuum chamber equipped with low energy electron diffraction (LEED) and Auger electron spectroscopy, x-ray photoelectron spectroscopy (XPS), infrared reflection absorption spectroscopy (IRAS), and scanning tunneling microscopy (STM). Atomically resolved atomic force microscopy (AFM) and STM image...

Clear as glass: The atomic structure of a metal-supported vitreous thin silica film was resolved using low-temperature scanning tunneling microscopy (STM). Based on the STM image, a model was constructed and the atomic arrangement of the thin silica glass determined (see picture). The total pair correlation function of the structural model shows good agreement with diffraction experiments performed on vitreous silica.

The atomic structure of thin silica films grown over a Ru(0001) substrate was studied by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, low energy electron diffraction, helium ion scattering spectroscopy, CO temperature programmed desorption, and scanning tunneling microscopy in combination with density functional theory calculations. The films were prepared by Si vapor deposition and subsequent oxidation at high temperatures. The silica film first grows as a monolayer of corner-sharing [SiO(4)] tetrahedra strongly bonded to the Ru(0001) surface through the Si-O-Ru linkages. At increasing amounts of Si, the film forms a bilayer of corner-sharing [SiO(4)] tetrahedra which is weakly bonded to Ru(0001). The bilayer film can be grown in either the crystalline or vitreous state, or both coexisting. Further increasing the film thickness leads to the formation of vitreous silica exhibiting a three-dimensional network of [SiO(4)]. The principal structure of the films can be monitored by infrared spectroscopy, as each structure shows a characteristic vibrational band, i.e., ∼1135 cm(-1) for a monolayer film, ∼1300 cm(-1) for the bilayer structures, and ∼1250 cm(-1) for the bulk-like vitreous silica.

No abstract

The atomic structure of vitreous and crystalline regions of a thin silica film on Ru(0001) was investigated using noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). We were able to resolve the atomic arrangement of the Si and the O atoms in the crystalline and the vitreous structures. We discuss characteristic structural properties of the films, such as distances, orientations, and angles, and we compare our results to experiments and simulations of bulk vitreous silica networks. It was found that order in two-dimensional vitreous networks can extend up to 2 nm

The interface between a crystalline and a vitreous phase of a thin metal supported silica film was studied by low temperature scanning tunneling microscopy. The locally resolved evolution of Si-Si nearest neighbor distances and characteristic angles was evaluated across the border. Furthermore, we investigated the behavior of the ring size distribution close to the crystalline-vitreous transition. The crystalline order was found to decay gradually within about 1.6 nm into the vitreous state.

Charge hopping and percolation in quantum dot (QD) solids has been widely studied, but the microscopic nature of the percolation process is not understood or determined. Here we present the first imaging of the charge percolation pathways in two-dimensional PbS QD arrays using Kelvin probe force microscopy (KPFM). We show that under dark conditions electrons percolate via in-gap states (IGS) instead of the conduction band, while holes percolate via valence band states. This novel transport behavior is explained by the electronic structure and energy level alignment of the individual QDs, which was measured by scanning tunneling spectroscopy (STS). Chemical treatments with hydrazine can remove the IGS, resulting in an intrinsic defect-free semiconductor, as revealed by STS and surface potential spectroscopy. The control over IGS can guide the design of novel electronic devices with impurity conduction, and photodiodes with controlled doping.

The reaction of CO with chemisorbed oxygen on three low-index faces of copper was studied using ambient pressure X-ray photoelectron spectroscopy (XPS) and high-pressure scanning tunneling microscopy. At room temperature, the chemisorbed oxide can be removed by reaction with gas-phase CO in the 0.01−0.20 Torr pressure range. The reaction rates were determined by measuring the XPS peak intensities of O and CO as a function of time, pressure, and temperature. On Cu(111) the rate was found to be one order of magnitude faster than that on Cu(100) and two orders of magnitude faster than that on Cu(110). The apparent activation energies for CO oxidation were measured as 0.24 eV for O/Cu(111), 0.29 eV for O/ Cu(100), and 0.51 eV for O/Cu(110) in the temperature range between 298 and 473 K. These energies are correlated to the oxygen binding energies on each surface.