Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, 1-3 communications, 4, 5 and computing. 6, 7 Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, 8-10 but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nanobeam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines (ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a straintuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ∼10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties. 1 arXiv:1901.05952v2 [cond-mat.mtrl-sci]

Investigations have been conducted to experimentally validate the mechanisms of ionization in two-temperature atmospheric pressure air plasmas in which the electron temperature is elevated with respect to the gas temperature. To test a predicted S-shaped dependence of steady-state electron number density on the electron temperature and its macroscopic interpretation in terms of current density versus electric field, direct-current (dc) glow discharge experiments have been conducted in flowing low temperature, atmospheric pressure air plasmas. These experiments show that it is feasible to create stable diffuse glow discharges with electron number densities in excess of 1012 cm−3 in atmospheric pressure air plasmas. Electrical characteristics were measured and the thermodynamic parameters of the discharge were obtained by spectroscopic measurements. The measured gas temperature is not noticeably affected by whether or not the dc discharge is applied. The discharge area was determined from spatially resolved optical measurements of plasma emission during discharge excitation. The measured discharge characteristics are found to be in good agreement with the predicted electrical characteristics.

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Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.

Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. Here we employ strain confinement in monolayer MoSe2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns–1, which exceeds reported radiative rates of WSe2 QEs by 2 orders of magnitude.

Diffuse glow discharges were produced in low temperature (<2000 K) atmospheric pressure air and nitrogen plasmas with electron number densities in excess of 1012 cm­3, more than six orders of magnitude higher than in thermally heated air at 2000 K. The measured discharge characteristics compare well with the predictions of a two-temperature kinetic model. Experimental and modeling results show that the steady-state electron number density exhibits an S-shaped dependence on the electron temperature, a behavior resulting from competition between ionization and charge-transfer reactions. Non-Maxwellian effects are shown to be unimportant for the prediction of steady-state electron number densities. The power requirements of DC discharges at atmospheric pressure can be reduced by several orders of magnitude using short repetitive high-voltage pulses. Between consecutive pulses, the plasma is sustained by the finite rate of electron recombination. Repetitive discharges with a 100-kHz, 12-kV, 10-ns pulse generator were demonstrated to produce over 1012 electrons/cm3 with an average power of 12 W/cm3, 250 times smaller than a DC discharge at 1012 cm­3.