The realization of high performance green organic light emitting diodes with long device lifetime using a platinum emitter is demonstrated in this work. The platinum emitter shows a short emission lifetime of 2.7 μs in thin film and a high Td of 489 °C. The Pt OLED with 9 wt% doping concentration exhibited an EQE of up to 20.4% and a current efficiency of up to 70.6 cd A−1 at a current density (luminance) of 20 mA cm−2 (14110 cd m−2), respectively. Notably, a respectable device lifetime (LT95) of 373 h at 10000 cd m−2 has been achieved, and this value is comparable to the reference Ir complex.
:Silicon photomultiplier with epitaxial quenching resistor (EQR SiPM) uses the bulk resistors of the epitaxial layer as the quenching resistors, it features high microcell density, high photon detection efficiency (PDE) and fast response to even a single photon. This report details the latest progress of EQR SiPM at Novel Device Laboratory (NDL). The PDE was precisely characterized by using both improved photon counting method and Poisson statistics method. Typically, the EQR SiPMs, with P-on-N diode configuration and 10000 individual cells within 1×1 mm 2 active area, demonstrated a dark count rate of 700 kHz at 7 V overvoltage, peak PDE of ~34% at 420 nm, single-photon time resolution (SPTR) of 53 ps (FWHM) and the recovery time of 2.2 ns. Those performances show that the EQR SiPM is very suitable to be applied in a calorimeter of high energy physics where large dynamic range and high PDE are needed simulaneously.
Phosphorescent platinum emitters have played the vital important role in the development of organic light‐emitting diodes (OLEDs). The formidable challenge for commercializing platinum emitters primarily lies in the promotion of operational stability, since only moderate device lifetimes have been recorded. In this work, green OLEDs with high efficiency and color purity have been realized using a new developed platinum emitter, which shows a short emission lifetime of 2.4 µs and a high decomposition temperature of 441 °C. More importantly, a respectable device lifetime (LT95) of 572 h at 10000 cd m−2 has been achieved, evidencing its viable prospect for commercial display and light‐emitting applications.
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