Bond strength evaluation of wire bonding in microchips is the key study in any wire bonding mechanism. The quality of the wire bond interconnection relates very closely to the reliability of the microchip during performance of its function in any application. In many reports, concerns regarding the reliability of the microchip are raised due to formation of void at the wire-bond pad bonding interface, predominantly after high temperature storage (HTS) annealing conditions. In this report, the quality of wire bonds prepared at different conditions, specifically annealed at different HTS durations are determined by measurements of the strength of the interface between the bond wire and the bond pad. The samples are tested in pull test and bond shear test. It was observed that the higher bonding temperature as well as the longer duration of HTS increased the bond strength. This is represented through the analysis of the measurements of ball shear strength. This is due to the fact that higher bonding temperature and longer HTS promoted better growth of the Cu-Al IMC layer. A transmission electron microscopy - energy dispersive X-ray analysis (TEM-EDX) has been carried out to observe the formation of the Cu-Al IMC layer in the sample.
With the continue soaring of world's gold price semiconductor companies are force to re-channel their effort to copper wire capability and reliability development as packaging interconnect material to replace gold wire. Besides, cost saving copper wire has many advantages over gold in term of mechanical and good electrical together with improve thermal conductance. Its also offer stable electrical resistance after thermal aging with lower and stable intermetallic growth on top of lower diffusion rate. These advantages have lead to lower heat generation and improved bonding thermal reliability integration compare to its gold wire predecessor. Cratering and oxidation are the two main challenges copper wire faced due to the nature of copper materials properties itself. The 5N & 4N copper wire sparking power and time influence towards ball bond grain size distribution and bonding stress correlation to cratering sensitve bond pad structure couple with optimum bond parameter were studied in addition to FEA Cu ball stress and strain distribution modeling. Mechanical, thermal and moisture reliability stress test like TC 1OOOX, HTS @175 Deg C, HTRB, H3TRB, PCT ( 96 hrs tests were performed on top of pad etching, ball shear adU wire pull destructive test were assess to validate the robustness of copper wire bonding integrity.
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