Characterization of Silicon Die Strength with Different Die Backside Unevenness Location

Chia, Lee Cher; Huat, Lim Boon; Wan, Chong May; Robiatun, Mohamad Som Siti; Man, Jessie Liong Shih

doi:10.1109/iemt.2018.8511673

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…(2018), states that any unevenness of the die after grinding was the main factor of low die strength that make it's susceptible to cracks. [6] Lastly, Marks et. al.…”

Section: Review Of Related Literaturementioning

confidence: 99%

Wafer Thinning Process and Its Critical Manufacturability Requirements

Bacquian¹

2020

JERR

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Wafer Thinning as a major semiconductor process steps to attain miniaturization of Integrated Circuit or IC. Wafer back grinding up to 70 µm thickness is considered critical due to its fragility. The paper will discuss the definition and establishment of critical equipment check items to lessen the risk of breakage. Equipment covered was an inline wafer back grinding and wafer mounting. The research has used a qualitative approach by applying process mapping to identify critical sub-process steps. Thereafter, the results show the establishment of critical equipment subprocess steps such as grinding, lamination and de taping. Foreign material and alignment control are considered areas for improvement and have incorporated the control at the equipment preventive maintenance. After all the evaluation, wafer thinning process was successfully released and proliferated from development to manufacturing.

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“…(2018), states that any unevenness of the die after grinding was the main factor of low die strength that make it's susceptible to cracks. [6] Lastly, Marks et. al.…”

Section: Review Of Related Literaturementioning

confidence: 99%

Wafer Thinning Process and Its Critical Manufacturability Requirements

Bacquian¹

2020

JERR

View full text Add to dashboard Cite

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“…Die strength is one critical output characteristic during wafer back grinding characterization. As integrated circuit becoming thinner the silicon die strength has becoming a critical package reliability under severe condition [9,10]. There were four factors influencing the die strength: The surface roughness of the wafer, the backside chipping of die, the weak plane of the crystal lattice of silicon and the test methods with different loading types [11].…”

Section: Die Strengthmentioning

confidence: 99%

A Study of the Effect of Back Grind Wheels on Wafer Edge Chippings and Die Strength

Bacquian¹

2020

JERR

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The drive for thinner package architecture is already becoming a necessity. There were a need of thinner Integrated Circuit or IC in order to fit in to thinner applications like mobile phones. One of the major semiconductor process that enables miniaturization was wafer back grinding. The process involves wafer thinning to a required thickness with the use of back grinding wheels that serve as the abrasive material. The paper will discuss the effect of back grind input parameters like step grinding and wheel grit size to its output characteristics like total thickness variation, edge chippings and die strength. Total thickness variation will define if the new wheel will not affect the variation with the wafer. On the other hand, edge chippings and die strength will define the reliability of the die on different conditions of the package. Lastly, these 3 characteristics will establish the manufacturability of the process as it will eliminate the probability of wafer breakage.

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Characterization of Silicon Die Strength with Different Die Backside Unevenness Location

Cited by 2 publications

References 2 publications

Wafer Thinning Process and Its Critical Manufacturability Requirements

Wafer Thinning Process and Its Critical Manufacturability Requirements

A Study of the Effect of Back Grind Wheels on Wafer Edge Chippings and Die Strength

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