Cerium substituted yttrium iron garnet (Ce:YIG) epitaxial thin films are prepared on a gadolinium gallium garnet (GGG) substrate with pulsed laser deposition. It is observed that the films grown on a GGG(111) substrate exhibit perpendicular magnetic anisotropy (PMA) as compared to films grown on a GGG(100) substrate. The developed PMA is confirmed from a magneto-optical Kerr effect, bulk magnetization, and ferromagnetic resonance measurements. Furthermore, the magnetic bubble domains are observed in the films exhibiting PMA. The observations are explained in terms of the growth direction of Ce:YIG films and the interplay of various magnetic anisotropy terms. The observed PMA is found to be tunable with the thickness of the film, and a remarkable temperature stability of the PMA is observed in all the studied films of Ce:YIG deposited on a GGG(111) substrate.
The effect of film thickness on the structural- and electrical-properties is investigated in Co2FeAl0.5Si0.5 (CFAS) thin films of thickness, t, in the range 12–75 nm. These films are grown by ultrahigh vacuum dc magnetron sputtering on Si(100) substrates with SiO2 buffer layer (300 nm), at the substrate temperature of 500 ◦C. The GIXRD patterns reveal that B2 structural order decreases with increasing t. The film with t = 75 nm has sizable A2 disorder. Irrespective of t, ρ(T, H = 0) goes through a minimum at T min. An elaborate quantitative analysis of the ρ(T, H = 0) data, taken over the temperature range 5 K to 300 K, demonstrates that the electron-diffuson ( e– d) and weak localization (WL) effects (responsible for the negative temperature coefficient of resistivity (TCR) for T < T min) compete with the electron-magnon ( e– m) and electron–phonon ( e– p) scattering ( positive TCR) contributions to produce a minimum at T min. Residual resistivity, ρ5K, and the e– d, wl, e– m and e– p scattering contributions to ρ(T, H = 0), ρ e– d, ρ wl, ρ e– m and ρ e– p, all go through a minimum at t = 50 nm. Regardless of t, the thermal renormalization of the spin-wave stiffness makes a significant contribution to ρ e– m.
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