We have grown ZnCdSe/ZnCdMgSe quantum well (QW) structures nearly lattice matched to InP substrates. Emission energies from 2.307 to 2.960 eV were measured by low-temperature photoluminescence at 10 K for samples with QW thicknesses between 5 and 80 Å. By using exactly lattice-matched QWs, the lower limit of the energy range can be lowered to about 2.2 eV (at 10 K). We propose that these structures could be used in entirely lattice-matched semiconductor lasers operating at room temperature in the blue, green, and yellow regions. Because of the absence of strain, these materials are expected to be less prone to degradation than the current blue-green lasers grown on GaAs.
Articles you may be interested inMgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm Appl. Phys. Lett. 105, 232107 (2014); 10.1063/1.4903823 Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition J. Appl. Phys. 95, 5352 (2004); 10.1063/1.1703833 Distributed Bragg reflectors based on (Zn, Cd, Mg)Se for use in the visible spectral range Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP
The quality of lattice-matched ZnxCdyMg1−x−ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1−x−ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106–107 cm−2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer.
Room-temperature optical pumped lasing emission in the red, green, and blue has been obtained from ZnCdMgSe/ZnCdSe quantum well ͑QW͒ laser structures grown on InP substrates. The structures are nearly identical, except for variations in the thickness and/or composition of the QW layer. No other single set of semiconductor materials has been demonstrated whose structures are pseudomorphic on one single substrate, and produces light emitters throughout the entire visible range. Our results demonstrate the potential for these materials as integrated full color display devices.
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