Defect reduction of ZnxCdyMg1−x−ySe based structures grown on InP by using Zn irradiation of the III–V surface

Zeng, L.; Guo, Shiping; Luo, Yi; Lin, W.; Tamargo, M. C.; Xing, H.; Cargill, G. S.

doi:10.1116/1.590734

Cited by 30 publications

(16 citation statements)

References 21 publications

(14 reference statements)

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“…The VI/II beam equivalent pressure ratio was about 3.5. This procedure has been shown to achieve epilayers with high crystalline quality and low defect density [4]. Thickness-calibration samples were grown during the same run.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

“…The details of the molecular beam epitaxy (MBE) system used and the growth of these II-VI materials were described elsewhere [4]. The MQW samples used in this work were grown on n-type InP (001) substrates and consisted of a lattice-matched InGaAs buffer layer (~0.1 µm), a ZnCdSe interfacial layer (~100 Å) and the II-VI MQW structures.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

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Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Lü

Shen

Muñoz

et al. 2006

Physica Status Solidi (b)

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Quantum well infrared photodetectors (QWIPs) from wide bandgap II -VI compounds are promising as high quantum efficiency detectors in the mid-IR. A series of Cl-doped Zn x Cd (1-x) Se/Zn x′ Cd y′ Mg (1-x′-y′) Se multiple-quantum-wells (MQW) with different quantum well (QW) thicknesses have been grown by MBE lattice-matched to InP substrates. The high material quality of the samples was demonstrated by X-ray diffraction (XRD), steady-state photoluminescence (PL), and time-resolved photoluminescence (t-PL) measurements. Contactless electroreflectance (CER) measurements were performed to investigate high order transitions within the QWs. From these transitions, intersubband transition energies were predicted and compared with the theoretical calculations, a very useful result for device design. Our results indicate that this material system is very promising for intersubband device applications such as QWIPs operating in the 3 -5 µm region.

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Section: Experimental Details and Resultsmentioning

confidence: 99%

Section: Experimental Details and Resultsmentioning

confidence: 99%

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Lü

Shen

Muñoz

et al. 2006

Physica Status Solidi (b)

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“…A sequence of steps has previously been developed to initiate ZnCdSe growth on an InGaAs surface [18]. Upon completion of the InGaAs layer growth, the sample is transferred to the II-VI chamber where the As-terminated InGaAs surface is exposed to a zinc flux for 40 s at a temperature of 200 1C (Zn-irradiation).…”

Section: Methodsmentioning

confidence: 99%

Molecular beam epitaxy growth of ZnxCd(1−x)Se/Znx′Cdy′Mg(1−x′−y′)Se-InP quantum cascade structures

Charles

Franz

Shen

et al. 2008

Journal of Crystal Growth

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“…[1]. The QW structure used in this work was grown on a semi-insulating InP (100) substrate and consisted of a lattice matched InGaAs buffer layer, a ZnCdSe interfacial layer (~70 Å), ZnCdMgSe (E 0 = 2.8 eV at RT) barriers and a QW of Zn 0.53 Cd 0.47 Se.…”

Section: Methodsmentioning

confidence: 99%

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

Muñoz

Lü

Guo

et al. 2004

Physica Status Solidi (b)

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The interband transitions of a single quantum well structure of Zn 0.53 Cd 0.47 Se/Zn 0.27 Cd 0.23 Mg 0.50 Se, lattice matched to InP, and of a capped CdSe quantum dot structure have been investigated using contactless electroreflectance. From a comparison of the quantum well optical transitions with those calculated using the envelope function approximation we determined the band offsets for this system. The electroreflectance spectrum of the quantum dot structure shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. Assuming a lens shape geometry and that the effective height-to-radius ratio observed in uncapped quantum dots is preserved, the size of the capped quantum dots was determined using the observed electroreflectance transitions, and the effective mass approximation. 1 Introduction In recent years there have been increasing efforts in the development of semiconductor nanostructures such as quantum wells (QWs), and quantum dots (QDs). Technological applications such as the development of quantum cascade lasers (QCLs) and the stimulated emission of QD-structures motivate this trend. Considerable advances have been achieved in the development of the QCLs, however, there are still many limitations of these lasers, such as the unavailability of QCLs operating in continuous wave (CW) mode at room temperature (RT) and the absence of QCLs operating at short wavelengths. Both of these limitations can be overcome if materials with larger conduction band offset (CBO) are used for these devices. The optical properties of self-assembled QDs have been widely studied using photoluminescence (PL), photoluminescence excitation spectroscopy, and time resolved photoluminescence, however the information obtained is restricted to lower energy states and does not allow to study the shape of the QD potential or the coupling effects in stacked structures. In this work we present contactless electroreflectance (CER) studies of QW structures to investigate the band offsets of Zn 0.53 Cd 0.47 Se/Zn 0.27 Cd 0.23 Mg 0.50 Se and of CdSe QDs with ZnSe barriers to establish their optical and structural properties. The advantages that CER offers for the spectroscopy of nanostructures are the observation of signals coming from the different parts of the structure and the observation of both ground state and higher order transitions.

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Defect reduction of ZnxCdyMg1−x−ySe based structures grown on InP by using Zn irradiation of the III–V surface

Cited by 30 publications

References 21 publications

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Molecular beam epitaxy growth of ZnxCd(1−x)Se/Znx′Cdy′Mg(1−x′−y′)Se-InP quantum cascade structures

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

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Defect reduction of ZnxCdyMg1−x−ySe based structures grown on InP by using Zn irradiation of the III–V surface

Cited by 30 publications

References 21 publications

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se multi‐quantum well structures for intersubband devices grown by MBE

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se multi‐quantum well structures for intersubband devices grown by MBE

Molecular beam epitaxy growth of ZnxCd(1−x)Se/Znx′Cdy′Mg(1−x′−y′)Se-InP quantum cascade structures

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

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Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE