Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 1017 cm−3 to 3 × 1020 cm−3 range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 1018 cm−3 range, in agreement with the result from four-probe measurements.
International audienceIn this work, we propose a stochastic level-set method to reconstruct binary tomography cross-sections from few projections. A first reconstruction image is obtained with a level-set regularization method. The reconstruction is then refined with a stochastic partial differential equation based on a Stratanovitch formulation. The reconstruction results are compared with the ones obtained with the classical simulated annealing method. The methods are tested on a complex bone μ- CT cross-section for different noise levels and number of projections. The best reconstruction results are obtained with the stochastic level set-method
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