The electron and hole ionization coefficients α and β in (100) InP have been determined through analysis of photomultiplication data on p+-n and n+-p junctions grown by liquid phase epitaxy (LPE). A special device structure is described which allows reproducible thinning of the substrate in order to achieve pure carrier injection from either side of the p-n junction. By fabricating wafers with depletion layer doping levels from 1.2×1015 to 1.2×1017 cm−3, α and β have been determined over a wider range of electric fields than previously reported. The ratio of β/α decreases from 4.0 to 1.3 as the electric field is increased from 2.4 to 7.7×105 V/cm.
The high field (>30 kV/cm) electron drift velocity in n-type (100) InP has been measured at temperatures from 95 to 400 K and electric field strengths up to 215 kV/cm using a fixed frequency (7.54 GHz) microwave time-of-flight technique. The velocity decreases monotonically with increasing electric field strength at all temperatures over the entire range of field strengths investigated. At 300 K the electron drift velocity in InP is 1.2 times the velocity in GaAs at 150 kV/cm, and increases to 1.34 times the velocity in GaAs when the field is lowered to 30 kV/cm.
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