Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

Cook, L. W.; Bulman, G. E.; Stillman, G. E.

doi:10.1063/1.93190

Cited by 149 publications

(37 citation statements)

References 6 publications

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“…In general, first, calculate electric field as a function of reverse voltages and positions; secondly, choose ionization rate for electron and hole (we calculate our experiments with Osaka and Cook's InP ionization rates [17][18]); thirdly, the positions where electric field drops to zero at a given bias are calculated, and the distance from these zero field positions to the position of x=0 is used as depletion region width.…”

Section: Resultsmentioning

confidence: 99%

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Zhao

2007

Optoelectronic Materials and Devices II

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In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (V br ). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.

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Section: Resultsmentioning

confidence: 99%

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Zhao

2007

Optoelectronic Materials and Devices II

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“…As the multiplication region scales down, the electric field should be increased in order to achieve the same gain. But the ratio   / in InP material tends to become unity when the applied electric field grows stronger [3,4] . Therefore, according to the McIntyre's theory, the noise performance of APDs with a thinner multiplication region will be poorer.…”

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confidence: 97%

Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

Wang

2009

Chin. Sci. Bull.

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An ensemble Monte Carlo simulation is presented to investigate the avalanche multiplication process in thin InP avalanche photodiodes (APDs). Analytical band structures are applied to the description of the conduction and valence band, and impact ionization is treated as an additional scattering mechanism with the Keldysh formula. Multiplication gain and excess noise factor of InP p  in  APDs are simulated and obvious excess noise reduction is found in the thinner devices. The effect of dead space on excess noise in thin APD structures is investigated by the distribution of impact ionization events within the multiplication region. It is found that the dead space can suppress the feedback ionization events resulting in a more deterministic avalanche multiplication process and reduce the excess noise in thinner APDs.avalanche photodiodes, excess noise factor, dead space, InP Avalanche photodiodes (APDs) are important components in optical receivers for the improved sensitivity provided by the internal impact ionization gain [1] . However, the available gain is limited by the excess noise due to the random fluctuation in the multiplication gain. APD noise is commonly described by the excess noise factor F. The conventional McIntyre's noise theory [2] states that the excess noise is related to the ratio between hole and electron impact ionization coefficients ,  and a low excess noise can only be achieved in materials with large difference in electron and hole coefficientsThe The McIntyre's theory has been successfully used to characterize the avalanche gain and excess noise of conventional APDs with a thick multiplication region. As the multiplication region scales down, the electric field should be increased in order to achieve the same gain. But the ratio   / in InP material tends to become unity when the applied electric field grows stronger [3,4] . Therefore, according to the McIntyre's theory, the noise performance of APDs with a thinner multiplication region will be poorer. However, recent experiments on InP and GaAs show that APDs with an ultrathin multiplication region under submicron scale demonstrate lower excess noise than that predicted by the McIntyre's theory [5][6][7] . Such facts indicate that the conventional McIntyre's theory is not applicable to thin structures because the theory is a local model which rests on the assumption that the ability of electrons and holes to impact ionize is uniform within the multiplication region and does not depend on their past history. In thin structures under submicron scale, the non-local effects such as dead space become much more significant. Dead space is the distance traveled by a carrier to gain sufficient energy from the electric field to initiate an impact ionization event. Great efforts have been made to develop theories incorporating non-local effects. Hayat et al. developed a dead space multiplication theory (DSMT) which included the dead space effect [8,9] .The DSMT model takes into account the effect of past history before a carrier can im...

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“…Tunneling current can be excluded by setting . Lastly, presence of dead space can be ignored by assuming zero dead space for both electrons and holes and by employing ionization coefficients available for bulk InP, in which the dead-space effects are inherently neglected [22]. Results from each of these three sets of incomplete calculations are compared to those from the complete calculation in Fig.…”

Section: B Competing Effects Of Avalanche Excess Noise Bandwidth Amentioning

confidence: 99%

Optimization of InP APDs for high-speed lightwave systems

Ong

David

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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Abstract-Calculations based on a rigorous analytical model are carried out to optimize the width of the indium phosphide avalanche region in high-speed direct-detection avalanche photodiode-based optical receivers. The model includes the effects of intersymbol interference (ISI), tunneling current, avalanche noise, and its correlation with the stochastic avalanche duration, as well as dead space. A minimum receiver sensitivity of 28 dBm is predicted at an optimal width of 0.18 m and an optimal gain of approximately 13, for a 10 Gb/s communication system, assuming a Johnson noise level of 629 noise electrons per bit. The interplay among the factors controlling the optimum sensitivity is confirmed. Results show that for a given transmission speed, as the device width decreases below an optimum value, increased tunneling current outweighs avalanche noise reduction due to dead space, resulting in an increase in receiver sensitivity. As the device width increases above its optimum value, the receiver sensitivity increases as device bandwidth decreases, causing ISI to dominate avalanche noise and tunneling current shot noise.

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Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

Cited by 149 publications

References 6 publications

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

Optimization of InP APDs for high-speed lightwave systems

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