No abstract

No abstract

No abstract

Electrical and photovoltaic properties of indiumtinoxide/pInSe/Au solar cellsElectron diffusion length measurements have been performed in p-type InP by different methods: Sut?a~e photovoltage, spectrum analysis of the photocurrent in an indium tin oxide/p-lnP diode, vanatlOn of the photovoltage in this diode versus reverse voltage, and electron beam induced current measurements. The results are compared and discussed in detail. A double p-type region model with different electron diffusion lengths has been proposed to explain the experimental results.

No abstract

No abstract

No abstract

Articles you may be interested inStoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects New surface atomic structures for column V overlayers on the (110) surfaces of III-V compound semiconductorsInterfaces formed between metals (In, Ag) and cleaved (110) surfaces of III-V compound semiconductors (GaSb, GaAs) held at low temperature are studied with low-energy electron diffraction and electron energy-loss spectroscopy. We consider the unrelaxation of the semiconductor surface structure by the metal adatoms, the adsorption sites on the surface and their implications for semiconductor band bending. The results are discussed in light of recent scanning tunneling microscopy measurements on metal/semiconductor interfaces and tight binding calculations of preferential adsorption sites.