The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

Soonckindt, L.; Etienne, D.; Marchand, J.P.; Lassabatere, L.

doi:10.1016/0039-6028(79)90416-3

Cited by 24 publications

(5 citation statements)

References 4 publications

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“…This indicates a miscibility without a gap in the ZnS 1-x Se x system for all compositions 0 < x < 1 in line with the experiments. [2][3][4][5][6][7][8][9] This observation can be explained by the similar size of the lattice parameter of ZnS (5.41 Å) and ZnSe (5.67 Å).…”

Section: Miscibility Of Zns and Znsementioning

confidence: 99%

“…For isostructural compounds with anions of similar size like ZnS and ZnSe a miscibility over the complete range 0 < x < 1 was found experimentally. [2][3][4][5][6][7][8][9] Both chalcogenides crystallize in the sphalerite structure at temperatures below 1000 °C. The dependence of the lattice parameter a for such systems is usually linear in x (eq 3) (Vegard's rule 10 ) while the band gap E g can show a quadratic behavior.…”

Section: Introductionmentioning

confidence: 99%

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Miscibility of Zinc Chalcogenides

Janetzko

Jug

2004

J. Phys. Chem. A

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Solid solutions in the system zinc sulfide/zinc selenide (ZnS1 - x Se x ) and in the system zinc oxide/zinc sulfide (ZnO1 - x S x ) were investigated using the cyclic cluster model within the semiempirical MSINDO method. Results of cyclic cluster calculations for the optimized lattice parameters, band gaps, and binding energies of the perfect zinc chalcogenides ZnO, ZnS, and ZnSe are presented and compared with the experimental data. The miscibility of zinc sulfide and zinc selenide over the complete range of 0 < x < 1 was investigated by calculating the free enthalpy of mixing ΔM G for different values of x. The variation of the lattice constant and the band gap in dependence of the composition of the solid solution was determined. The miscibility in the system ZnO1 - x S x was investigated for x = 0.02. The free enthalpy of mixing, the variation of the lattice parameters, and the cell volume were calculated. All data are compared with available experimental results.

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Section: Miscibility Of Zns and Znsementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Miscibility of Zinc Chalcogenides

Janetzko

Jug

2004

J. Phys. Chem. A

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“…[1][2][3][4] These shifts in zinc chalcogenides are markedly stronger than, e.g., in cadmium chalcogenides, group-IV materials, and many III-V compounds. The available experimental data on the temperature dependence of the lowest (1s) exciton line, E 1s (T), or the associated fundamental band gap, E g (T), in ZnS, [5][6][7][8][9] ZnSe, 5,[10][11][12][13][14][15] and ZnTe [16][17][18] bulk crystals or layers is in the range of cryogenic to room temperatures. Most of these E(T) data sets [5][6][7][8][9][10][11][12][13][14][15][16][17][18] are not adequate, however, for detailed analytical and numerical descriptions or reliable extrapolations above room temperature.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Pässler

Griebl

Riepl

et al. 1999

Journal of Applied Physics

136

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High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on ͑001͒-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E 1s (T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E 1s (T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E 1s (T) data sets for cubic ZnS, are discussed.

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Section: Resultsmentioning

confidence: 97%

“…As mentioned above, we used 325 nm HeCd laser as the excitation source of the PL measurements. Referring to previous papers on temperature dependence of the bandgap energy of ZnS [19,20], the excitation energy of 325 nm is smaller than the bandgap energy of ZnS below 50-80 K. This implies that the PL measurements were carried out under the condition of below-gap excitation below 50-80 K and overgap excitation above 50-80 K. Figure 3 shows the PL spectra of ZnS grown at 500, 600, and 700 • C at 10 K. The blue emissions can be observed around 420-460 nm from the samples, those are related to the S vacancies of ZnS [21]. The peaks around 340-370 nm from the samples grown at 600 and 700 • C would be background peaks due to the stray-light.…”

Section: Low Temperature Photoluminescence Spectramentioning

confidence: 99%

Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

Uno

Asano

Tanaka

2016

Physica Status Solidi (b)

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Photoluminescence (PL) thermal quenching properties of zinc sulfide (ZnS) films, which were grown by mist chemical vapor deposition (mist‐CVD), were systematically investigated. The samples were grown from thiourea‐based solutions at various temperatures. Strong PL emissions related to S vacancies were observed from the sample grown at 600 and 700 °C and their thermal quenching properties were very small. PL spectra from the sample grown at 500 °C contains zinc oxide (ZnO) related peaks. The ZnO related PL peaks has almost no energy shift with the increase of temperature. This would be due to the mismatch of thermal expansion coefficient between ZnS and ZnO.

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The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

Cited by 24 publications

References 4 publications

Miscibility of Zinc Chalcogenides

Miscibility of Zinc Chalcogenides

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Photoluminescence thermal quenching properties of zinc sulfide grown by mist chemical vapor deposition

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