1979
DOI: 10.1016/0039-6028(79)90416-3
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The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

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Cited by 24 publications
(5 citation statements)
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“…This indicates a miscibility without a gap in the ZnS 1-x Se x system for all compositions 0 < x < 1 in line with the experiments. [2][3][4][5][6][7][8][9] This observation can be explained by the similar size of the lattice parameter of ZnS (5.41 Å) and ZnSe (5.67 Å).…”
Section: Miscibility Of Zns and Znsementioning
confidence: 99%
See 1 more Smart Citation
“…This indicates a miscibility without a gap in the ZnS 1-x Se x system for all compositions 0 < x < 1 in line with the experiments. [2][3][4][5][6][7][8][9] This observation can be explained by the similar size of the lattice parameter of ZnS (5.41 Å) and ZnSe (5.67 Å).…”
Section: Miscibility Of Zns and Znsementioning
confidence: 99%
“…For isostructural compounds with anions of similar size like ZnS and ZnSe a miscibility over the complete range 0 < x < 1 was found experimentally. [2][3][4][5][6][7][8][9] Both chalcogenides crystallize in the sphalerite structure at temperatures below 1000 °C. The dependence of the lattice parameter a for such systems is usually linear in x (eq 3) (Vegard's rule 10 ) while the band gap E g can show a quadratic behavior.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] These shifts in zinc chalcogenides are markedly stronger than, e.g., in cadmium chalcogenides, group-IV materials, and many III-V compounds. The available experimental data on the temperature dependence of the lowest (1s) exciton line, E 1s (T), or the associated fundamental band gap, E g (T), in ZnS, [5][6][7][8][9] ZnSe, 5,[10][11][12][13][14][15] and ZnTe [16][17][18] bulk crystals or layers is in the range of cryogenic to room temperatures. Most of these E(T) data sets [5][6][7][8][9][10][11][12][13][14][15][16][17][18] are not adequate, however, for detailed analytical and numerical descriptions or reliable extrapolations above room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…As mentioned above, we used 325 nm HeCd laser as the excitation source of the PL measurements. Referring to previous papers on temperature dependence of the bandgap energy of ZnS , the excitation energy of 325 nm is smaller than the bandgap energy of ZnS below 50–80 K. This implies that the PL measurements were carried out under the condition of below‐gap excitation below 50–80 K and over‐gap excitation above 50–80 K.…”
Section: Resultsmentioning
confidence: 97%
“…As mentioned above, we used 325 nm HeCd laser as the excitation source of the PL measurements. Referring to previous papers on temperature dependence of the bandgap energy of ZnS [19,20], the excitation energy of 325 nm is smaller than the bandgap energy of ZnS below 50-80 K. This implies that the PL measurements were carried out under the condition of below-gap excitation below 50-80 K and overgap excitation above 50-80 K. Figure 3 shows the PL spectra of ZnS grown at 500, 600, and 700 • C at 10 K. The blue emissions can be observed around 420-460 nm from the samples, those are related to the S vacancies of ZnS [21]. The peaks around 340-370 nm from the samples grown at 600 and 700 • C would be background peaks due to the stray-light.…”
Section: Low Temperature Photoluminescence Spectramentioning
confidence: 99%