Cross-sectional transmission electron microscopy (XTEM) is an imaging technique particularly suited to the study of layered structures. For integrated electronic devices it has become a common practice to use XTEM to assess the shape and crystallinity of component layers as well as defect structures introduced by processing. A procedure for preparing samples to be viewed by XTEM is described.
Silicide formation by reaction of palladium metal (Pd 0 ) with hydrogenated amorphous silicon (a-Si:H) substrates was studied with Rutherford backscattering spectrometry (RBS), forward recoil spectrometry, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Upon low-temperature (200 0 C) annealing, RBS and TEM show a single-phase Pd 2 Si.This phase grows with the square root of time, and the activation energy is identical to that of the corresponding metal on single-crystal silicon substrates. The growth is slightly faster for hydrogenated amorphous silicon, which is attributed to its amorphous structure.During silicide formation, the hydrogen is released from silicides and presumably outdiffuses into a vacuum without interfacial accumulation.Thus, barrier formation does not occur, and the presence of hydrogen in the substrates has no effect on silicide growth.The silicide electronic structure (core level binding energies, lineshapes, and d-band filling) of Pd 2 Si on a-Si:H is identical to that of Pd 2 Si formed on cr stalline silicon. Binding energy and peak shape analysis show the Pd 2 Si/Pd interface to be composed of one additional phase, Pd 4 Si, which has a well-defined binding energy (335.8 eV) and a narrow (FWHM = 1.
Dark current in CCD imagers is often the largest noise source. It is expected to be an increasingly serious problem as device dimensions are scaled. For dense image arrays, surface states along the oxide interface of the channel-stop sidewalls constitute a major source of dark current because the sidewall scales as a perimeter. Diagnostics are required to understand the origin of generation from channel stops and for process optimization. We present novel analytical and experimental methods for characterizing dark current in CCD devices based on a two-dimensional extension of the gateddiode technique.
EXPERIMENTAL RESULTSAnalysis of the origin of dark current in CCDs has been difficult owing to the complexity of the structure and the process and because noise may come from more than one location. Darkcurrent spikes produced by isolated defects as well as fluctuations in "uniform" dark current limit performance and yield of large-area sensors. We present analytical and experimental techniques for characterizing defects. Particular attention is paid to establishing the spatial location of generation recombination centers. A new method for determining the generation current density along the channel-stop sidewall shows that dark current from this region will be an important concern fdr scaled imagers. Figure 1 shows a conventional gateddiode characteristic for a buried-channel CCD obtained by identically biasing all gates of a four-phase device fabricated on
Hexagonal-structure polycrystalline Ta2N films with (213̄1) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2 atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(111) using the same deposition conditions showed that the average grain size was ≂10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2×10−4 Ω cm and 1.2×10−4 K−1, respectively. The films exhibited relatively low compressive stresses, 1–3×109 dyn cm−2, and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2×107 thermal cycles between <200 and ≂850 °C.
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