Helical Dirac fermions-charge carriers that behave as massless relativistic particles with an intrinsic angular momentum (spin) locked to its translational momentum-are proposed to be the key to realizing fundamentally new phenomena in condensed matter physics. Prominent examples include the anomalous quantization of magneto-electric coupling, half-fermion states that are their own antiparticle, and charge fractionalization in a Bose-Einstein condensate, all of which are not possible with conventional Dirac fermions of the graphene variety. Helical Dirac fermions have so far remained elusive owing to the lack of necessary spin-sensitive measurements and because such fermions are forbidden to exist in conventional materials harbouring relativistic electrons, such as graphene or bismuth. It has recently been proposed that helical Dirac fermions may exist at the edges of certain types of topologically ordered insulators-materials with a bulk insulating gap of spin-orbit origin and surface states protected against scattering by time-reversal symmetry-and that their peculiar properties may be accessed provided the insulator is tuned into the so-called topological transport regime. However, helical Dirac fermions have not been observed in existing topological insulators. Here we report the realization and characterization of a tunable topological insulator in a bismuth-based class of material by combining spin-imaging and momentum-resolved spectroscopies, bulk charge compensation, Hall transport measurements and surface quantum control. Our results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry's phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime. The observed topological nodal state is shown to be protected even up to 300 K. Our demonstration of room-temperature topological order and non-trivial spin-texture in stoichiometric Bi(2)Se(3).M(x) (M(x) indicates surface doping or gating control) paves the way for future graphene-like studies of topological insulators, and applications of the observed spin-polarized edge channels in spintronic and computing technologies possibly at room temperature.

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (delta approximately 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

Some of the most intriguing properties of graphene are predicted for specifically designed nanostructures such as nanoribbons. Functionalities far beyond those known from extended graphene systems include electronic band gap variations related to quantum confinement and edge effects, as well as localized spin-polarized edge states for specific edge geometries. The inability to produce graphene nanostructures with the needed precision, however, has so far hampered the verification of the predicted electronic properties. Here, we report on the electronic band gap and dispersion of the occupied electronic bands of atomically precise graphene nanoribbons fabricated via on-surface synthesis. Angle-resolved photoelectron spectroscopy and scanning tunneling spectroscopy data from armchair graphene nanoribbons of width N = 7 supported on Au(111) reveal a band gap of 2.3 eV, an effective mass of 0.21 m(0) at the top of the valence band, and an energy-dependent charge carrier velocity reaching 8.2 × 10(5) m/s in the linear part of the valence band. These results are in quantitative agreement with theoretical predictions that include image charge corrections accounting for screening by the metal substrate and confirm the importance of electron-electron interactions in graphene nanoribbons.

We present a new high-resolution angle-resolved photoemission study of 1T -TiSe2 in both, its room-temperature, normal phase and its low-temperature, charge-density wave phase. At low temperature the photoemission spectra are strongly modified, with large band renormalisations at highsymmetry points of the Brillouin zone and a very large transfer of spectral weight to backfolded bands. A theoretical calculation of the spectral function for an excitonic insulator phase reproduces the experimental features with very good agreement. This gives strong evidence in favour of the excitonic insulator scenario as a driving force for the charge-density wave transition in 1T -TiSe2. PACS numbers:Transition-metal dichalcogenides (TMDC's) are layered compounds exhibiting a variety of interesting physical properties, mainly due to their reduced dimensionality [1]. One of the most frequent characteristics is a ground state exhibiting a charge-density wave (CDW), with its origin arising from a particular topology of the Fermi surface and/or a strong electron-phonon coupling [2]. Among the TMDC's 1T -TiSe 2 shows a commensurate 2×2×2 structural distortion below 202 K, accompanied by the softening of a zone boundary phonon and with changes in the transport properties [3,4]. In spite of many experimental and theoretical studies, the driving force for the transition remains controversial. Several angle-resolved photoelectron spectroscopy (ARPES) studies suggested either the onset of an excitonic insulator phase [5,6] or a band Jahn-Teller effect [7]. Furthermore, TiSe 2 has recently attracted strong interest due to the observation of superconductivity when intercalated with Cu [8]. In systems showing exotic properties, such as Kondo systems for example [9], the calculation of the spectral function has often been a necessary and decisive step for the interpretation of the ARPES data and the determination of the ground state of the systems. In the case of 1T -TiSe 2 , such a calculation for an excitonic insulator phase lacked so far.In this letter we present a high-resolution ARPES study of 1T -TiSe 2 , together with theoretical calculations of the excitonic insulator phase spectral function for this compound. We find that the experimental ARPES spectra show strong band renormalisations with a very large transfer of spectral weight into backfolded bands in the low-temperature phase. The spectral function calculated for the excitonic insulator phase is in strikingly good * Electronic address: herve.cercellier@unine.ch agreement with the experiments, giving strong evidence for the excitonic origin of the transition.The excitonic insulator model was first introduced in the sixties, for a semi-conductor or a semi-metal with a very small indirect gap E G [10,11,12,13]. Thermal excitations lead to the formation of holes in the valence band and electrons in the conduction band. For low free carrier densities, the weak screening of the electronhole Coulomb interaction leads to the formation of stable electron-hole bound states, called excito...

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES). In bilayer graphene the band gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular doping, the Fermi level is shifted into the band gap. The reduction of the charge carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge transfer complex are investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The doping effect on graphene is preserved in air and is temperature resistant up to 200• C. Furthermore, graphene non-covalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultra-high vacuum but also by wet chemistry.

When viewed as an elementary particle, the electron has spin and charge. When binding to the atomic nucleus, it also acquires an angular momentum quantum number corresponding to the quantized atomic orbital it occupies. Even if electrons in solids form bands and delocalize from the nuclei, in Mott insulators they retain their three fundamental quantum numbers: spin, charge and orbital. The hallmark of one-dimensional physics is a breaking up of the elementary electron into its separate degrees of freedom. The separation of the electron into independent quasi-particles that carry either spin (spinons) or charge (holons) was first observed fifteen years ago. Here we report observation of the separation of the orbital degree of freedom (orbiton) using resonant inelastic X-ray scattering on the one-dimensional Mott insulator Sr2CuO3. We resolve an orbiton separating itself from spinons and propagating through the lattice as a distinct quasi-particle with a substantial dispersion in energy over momentum, of about 0.2 electronvolts, over nearly one Brillouin zone.

Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z 2 topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study sheds new light on the surface-bulk connectivity in topological insulators, and reveals how this is modified by quantum confinement.

The ultrafast timescale of electron transfer processes is crucial to their role in many biological systems and technological devices. In dye-sensitized solar cells, the electron transfer from photo-excited dye molecules to nanostructured semiconductor substrates needs to be sufficiently fast to compete effectively against loss processes and thus achieve high solar energy conversion efficiencies. Time-resolved laser techniques indicate an upper limit of 20 to 100 femtoseconds for the time needed to inject an electron from a dye into a semiconductor, which corresponds to the timescale on which competing processes such as charge redistribution and intramolecular thermalization of excited states occur. Here we use resonant photoemission spectroscopy, which has previously been used to monitor electron transfer in simple systems with an order-of-magnitude improvement in time resolution, to show that electron transfer from an aromatic adsorbate to a TiO(2) semiconductor surface can occur in less than 3 fs. These results directly confirm that electronic coupling of the aromatic molecule to its substrate is sufficiently strong to suppress competing processes.