Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Sb</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Hsieh, David; Xia, Y.; Qian, Dong; Wray, L. Andrew; Meier, Fabian; Dil, J. Hugo; Osterwalder, Jürg; Patthey, L.; Fedorov, A. V.; Lin, Hsin; Bansil, Arun; Grauer, D.; Hor, Y. S.; Cava, R. J.; Hasan, M. Zahid

doi:10.1103/physrevlett.103.146401

Cited by 955 publications

(685 citation statements)

References 35 publications

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“…Time reversal symmetry results in an inversion between the cation and anion p states at the VBM and CBM [24] where the cation p states are observed to be lower in energy than the anion p states. For this reason the inclusion of SOC has been indicated by experiment and theory to be important to correctly describe their electronic structure [109].…”

Section: Sb 2 Smentioning

confidence: 99%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications, Journal of Solid State Chemistry, http: //dx.doi.org/10. 1016/j.jssc.2014.02.014 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/jsscThe electronic structure of the antimony chalcogenide series:Prospects for optoelectronic applications

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Section: Sb 2 Smentioning

confidence: 99%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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“…The prediction that these materials are 3D TIs with a single Dirac cone on the surface [7], was promptly verified in experiments by the surface sensitive technique of angle-resolved photoemission spectroscopy (ARPES) [8,9,10]. However, the interior (bulk) of these workhorse TI materials is in general not a genuine insulator, because of the presence of charge carriers induced by impurities and defect chemistry.…”

Section: Introductionmentioning

confidence: 99%

Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3
Pan
¹
,
Никитин
²
,
Wu
³

et al. 2016
Solid State Communications
7
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0
0
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“…However, intrinsic p doping of antimony-containing materials does not permit to access the Dirac point by conventional angle-resolved photoelectron spectroscopy [12] even after doping by alkali-metal atoms [13]. Angle-resolved two-photon photoemission (2PPE) uses a pump-probe process to access the unoccupied electronic states as indicated by the arrows in Fig.…”

mentioning

confidence: 99%

Bulk and surface electron dynamics in ap-type topological insulatorSnSb2Te4

et al. 2014

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Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb 2 Te 4 , a p-type topological insulator. The Dirac point is found 0.32 ± 0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43 ± 4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78 ± 5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of ∼3 nm as found from density functional theory calculations. While topological insulators (TIs) are bulk insulators, they exhibit a spin-polarized metallic topological surface state (TSS) with linear dispersion (Dirac cone) [1,2]. The helical spin structure of the Dirac cone was predicted to constrain intraband scattering in the absence of spin-flipping events, resulting in long carrier lifetimes [3]. Evidence for the suppression of elastic spin-flipping scattering events was given by Fourier-transformed scanning tunneling spectroscopy [4]. Time-resolved photoemission measures the transient population of initially empty electronic states following an optical pump pulse, and therefore allows us to access electron dynamics directly in the time domain. Previous studies have focused on carrier cooling in bismuth chalcogenides which are intrinsically n type [5][6][7] and can be p doped by Mg [8]. These studies showed that the electron dynamics of TSSs is dominated by the bulk conduction band, but did not provide scattering rates between TSS and the conduction or valence band. Such information could be related to results obtained from transport measurements and would be important for device applications.Complex ternary Sb 2 Te 3 -based alloys possess a layer structure with a van der Waals gap between Te layers and were recently proposed to exhibit a topological surface state [9][10][11]. However, intrinsic p doping of antimony-containing materials does not permit to access the Dirac point by conventional angle-resolved photoelectron spectroscopy [12] even after doping by alkali-metal atoms [13]. Angle-resolved two-photon photoemission (2PPE) uses a pump-probe process to access the unoccupied electronic states as indicated by the arrows in Fig. 1(a). Here, we show that SnSb 2 Te 4 is a p-doped TI and obtain energy and dispersion of the TSS as well as bulk conduction and valence bands by 2PPE. The results agree very well with results from density functional theory (DFT) calculations. Time-resolved 2PPE is used to measure the transient population dynamics. It is dominated by refilling from the conduction band and scattering to the valence band, which is partly depleted at the present doping level. The strong interaction between bulk and surface is attributed to the large penetration depth of the TSS. Two-photon photoemission experiments used the fundamental (1.63 eV, IR pump) and the third harmonic (4.89 eV, UV probe) of a Ti:sapphire oscillator with a repetition rate of 90 MHz. The width of the cro...

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Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

Cited by 955 publications

References 35 publications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3
Pan
¹
,
Никитин
²
,
Wu
³

et al. 2016
Solid State Communications
7
1
0
0
View full text Add to dashboard Cite

Bulk and surface electron dynamics in ap-type topological insulatorSnSb2Te4

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Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

Cited by 955 publications

References 35 publications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3Pan1, Никитин2, Wu3 et al. 2016Solid State Communications7100View full textAdd to dashboardCite

Bulk and surface electron dynamics in ap-type topological insulatorSnSb2Te4

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Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3
Pan
¹
,
Никитин
²
,
Wu
³

et al. 2016
Solid State Communications
7
1
0
0
View full text Add to dashboard Cite