Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi2−xSbxTe3

Quantum oscillations in metallic Sb2Te2Se topological insulator

“…Following the standard Dingle temperature analyses (upper inset in figure [6]), we have calculated the Dingle temperature, T D =35 K. With the value of T D =35 K, the surface carrier life time τ = /2πK B T D is estimated to be τ =3.5×10 −14 s. Similarly, other physical parameters like the mean free path l = v F τ , mobility µ = eτ /m cyc , and Fermi energy E F are estimated to be 23 nm, 600 cm 2 /V s, and 250 meV, respectively. These physical parameters are comparable with those of the previous reports on other topological systems 21,23 .…”