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Thin films of CuInSe2 have been fabricated by thermal annealing of evaporated elemental layers of Cu, In and Se onto Si (1 0 0) and Corning glass 7059 substrates at room temperature. Structural, optical and electrical properties of the layers were studied. X-ray diffraction revealed that the film was single phase with chalcopyrite structure and preferred orientation along the (1 1 2) plane. The temperature dependence of electrical conductivity exhibited two activation energies and the optical studies showed that the absorption coefficient of this film was above 3 × 104 cm−1 and the band gap was found to be 0.98 eV.

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