Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Bechiri, L.; Mahdjoubi, L.; Madelon, R.; Nouet, G.

doi:10.1016/s0927-0248(02)00243-x

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…Tungsten boat heated by Joule effect was used to evaporate ball milled CTSe powder. The films were thermally grown onto glass cleaned substrates by thermal evaporation technique as described elsewhere [23] at a substrate temperature of 400ºC and under a vacuum of about 10 -6 Torr in a Balzers coating unit. The structural characterization was performed by x-ray diffraction (XRD) using Philips Xpert NPD Pro diffractometer with Cu Kα radiation (λ = 1.5406 Å) using a step size of 0.02º and step time of 2 s and operating with a voltage of 40 kV and a filament current of 30 mA and the diffraction angles are scanned from 10 to 120°.…”

Section: Methodsmentioning

confidence: 99%

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Rekkache

Kassentini

Bechiri

et al. 2022

JNanoR

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Nanoparticles Cu2SnSe3 alloys were synthesized by mechanical alloying from mixtures of pure crystalline Cu, Sn and Se powders using a low cost planetary ball milling process optimizing the milling duration and the rotational speed. The properties of Cu2SnSe3 (CTSe) thin films deposited by thermal evaporation from this powder on glass substrate at Ts = 400°C were investigated. Powders and films were analyzed by X-ray diffraction (XRD), scanning electron microscopy(SEM), energy dispersive X-ray analysis (EDX), atomic force microscopy (AFM), to determine their microstructure, morphology, chemical compositions and root-mean-square (RMS) roughness. XRD analysis revealed that all samples crystallize in polycrystalline nature with cubic structure and lattice parameter a = 5.68 Å. The optical measurements were carried out in the [500-2500nm] wavelength range and were determined from spectral transmission data. Optical measurements showed that the deposited layers had a relatively high absorption coefficient of 104 cm-1 and the direct energy band gap was found to be around Eg =1.29eV. The suitable p-type conductivity of CTSe thin films was confirmed by hot probe method. Other electrical parameters (carrier concentration np = 10.04x1018 cm-3, electrical resistivity ρ = 30.49x10-2 Ω cm and mobility μH = 94.33 cm2/V s) were measured at room temperature.

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Section: Methodsmentioning

confidence: 99%

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Rekkache

Kassentini

Bechiri

et al. 2022

JNanoR

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“…The carrier type was determined using a Hall effect measurement with the Van der Pauw method. The resultant films were annealed at 450 • C for 30 min and slowly cooled [10]. All the photoluminescence (PL) measurements were carried out between 4.2 and 100 K. An argon ion laser with the 514.5 nm line in the excitation intensity range from 20 to 650 mW was used as an excitation source.…”

Section: Methodsmentioning

confidence: 99%

Optical properties of Cu(In, Ga)Te₂thin films

Yandjah¹,

Ayed²,

Amara³

et al. 2008

J. Phys. D: Appl. Phys.

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Structural and optical properties of polycrystalline Cu(In, Ga)Te2 thin films were analysed. They were deposited onto glass substrate by the flash evaporation technique and annealed at 450 °C in an argon atmosphere. Their optical properties in the near-infrared and visible range, 500–3000 nm, were studied to determine the gap. To identify the energy levels associated with various defect structures, photoluminescence (PL) measurements were carried out. The behaviour of the PL spectrum as a function of temperature and excitation intensity in these samples is reported. The PL spectrum of thin films after annealing in an argon atmosphere at 450 °C showed two peaks ranging from 0.90 to 1.15 eV. The first one, localized at 1.00 eV, was attributed to donor–acceptor pair transition while the second one at 1.05 eV was ascribed to a free-to-bound (F–B) transition.

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“…From the temperature dependence of the emission intensity, activation energies for the transitions can be deduced in the low-temperature range. 23) The arrhenius plots for peak 1 PL intensities are shown in Fig. 5.…”

Section: Photoluminescence Measurementsmentioning

confidence: 99%

Structural and Photoluminescence Study of Coevaporated CuInSe₂/Si(100) Thin Films

Merdes¹,

Bechiri

Benabdeslem

et al. 2006

jjap

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Microstructural and radiative properties of CuInSe2 films prepared by three-source evaporation have been investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and photoluminescence analysis (PL). To identify the energy levels associated with various defects, photoluminescence measurements have been carried out on as-deposited and annealed polycrystalline CuInSe2 thin films deposited onto (100)-oriented Si wafers doped with 1015/cm3 of boron. The behavior of PL spectra as function of temperature and excitation intensity is reported. PL spectra of thin films before and after annealing in argon atmosphere at 400 °C show emission peaks ranging from 0.88 to 1 eV. Annealing strongly increases PL signal at 0.958 eV. A mechanism that provides a qualitative explanation for the observed PL results is described.

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Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Cited by 6 publications

References 12 publications

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Optical properties of Cu(In, Ga)Te₂thin films

Structural and Photoluminescence Study of Coevaporated CuInSe₂/Si(100) Thin Films

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Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Cited by 6 publications

References 12 publications

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

Optical properties of Cu(In, Ga)Te2thin films

Structural and Photoluminescence Study of Coevaporated CuInSe2/Si(100) Thin Films

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Product

Resources

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Optical properties of Cu(In, Ga)Te₂thin films

Structural and Photoluminescence Study of Coevaporated CuInSe₂/Si(100) Thin Films