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Glass/Mo, Mo foil, glass/Mo/In, and glass/Mo/Cu stacked layers were selenized in closed vacuum tubes by isothermal and/or two-temperature zone annealing in Se vapors. The selenization process was studied dependent on Se vapor pressure, temperature and time. Samples were selenized from 375 to 580°C for 30 and 60 minutes. The applied Se pressure was varied between 130 and4.4⋅103 Pa. The increase of MoSe2film thickness was found to depend on the origin of Mo. MoSe2thicknessdLon Mo-foil was much higher than on sputtered Mo layers, and it depended linearly on time and as a power functiondL~PSe1/2on Se vapor pressure. The residual oxygen content in the formed MoSe2layers was much lower in the two-zone selenization process. If Mo was covered with Cu or In before selenization, these were found to diffuse into formed MoSe2layer. All the MoSe2layers showedp-type conductivity.

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