BiTeI crystals grown from the vapour phase are chemically analysed and their Hall coeficient and electrical conductivity are measured. The products of thermal dissociation of BiTeI crystals are studied by means of mass spectrometry. The excess iodine found and the free carrier concentration determined from the Hall coefficient are used for formulating a model of point defects in the BiTeI crystals. Excess oidine atoms enter sites in the tellurium sublattice, and bismuth vacancies with one negative charge are formed simultaneously. The crystal prepared from the vapour phase may be described by the formula Bi1−x/3Te1−xI1+x + ⅔xé.
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