Optical Properties of n‐Type Bi2–xInxTe3 Single Crystal

Single crystals of Bi2 − xInxTe3 (x = 0 to 0.3) are synthesised from elements of semiconductor purity using a modified Bridgman technique. The results of the measurements of Hall constant, electrical conductivity, and Seebeck coefficient show that increasing value of x leads to a decrease in the concentration of free charge carriers (holes), until inversion of the conductivity type from p to n takes place at a value of x ≈︁ 0.1 and in samples with x > 0.1 an increase in the concentration of free electrons is observed. This effect is accounted for by a model of point defects in the Bi2 − xInxTe3 crystal lattice. The model is based on the idea of substitutional defects In Bix leading to a decrease of the concentration of anti‐site Bi Te′ defects and a simultaneous increase of the concentration of V Te¨︂ vacancies in the Te sublattice.

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Point defects in Bi2 − xInx Te3 single crystals

Karamazov

Lošťák

Horák

et al. 1995

Phys. Stat. Sol. (a)

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The change of the electric conductivity type in crystals of Bi2−xInxTe3 solid solutions

Jansa¹,

Lošťák

Šrámková

et al. 1992

J Mater Sci

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Point defects in M_{2 – x}In_xTe₃ (M = Sb or Bi) crystals

Horák

Karamazov

Losŝtuák

1995

Philosophical Magazine B

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Spectral dependences of the reflectance R in the plasma-resonance frequency range have been measured on (0001) cleavage faces of Sbz -xIn,Te3 (x = 0.0-0.41) single-crystal samples grown from elements of 99.999% purity by means of a modified Bridgman technique. The plasma-resonance frequency (and hence the concentration P of holes) has been determined from the interpretation of the experiment R =f(v) curves. The dependence on P on the content of In atoms shows a monotonic decrease from a value of 6.4 X loz5 m -for x = 0 to 1 X loz5 m -for x = 0-41. The account for the decrease in the concentration of holes, we propose a model based on the assumption that the introduction of In atoms into the crystals results in a decrease in the concentration of antisite defects and, at the same time, in a change in the concentration of vacancies in the Te sublattice of SbzTe3 crystals.The P = f ( x ) dependence for Sbz -.In,Te3 crystals is compared with the variation in the concentration of free charge carriers with In content in Biz -,InxTe3 crystals.

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Optical Properties of n‐Type Bi_2–xIn_xTe₃ Single Crystal

Cited by 3 publications

References 9 publications

Point defects in Bi2 − xInx Te3 single crystals

Point defects in Bi2 − xInx Te3 single crystals

The change of the electric conductivity type in crystals of Bi2−xInxTe3 solid solutions

Point defects in M_{2 – x}In_xTe₃ (M = Sb or Bi) crystals

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Optical Properties of n‐Type Bi2–xInxTe3 Single Crystal

Cited by 3 publications

References 9 publications

Point defects in Bi2 − xInx Te3 single crystals

Point defects in Bi2 − xInx Te3 single crystals

The change of the electric conductivity type in crystals of Bi2−xInxTe3 solid solutions

Point defects in M2 – x In x Te3 (M = Sb or Bi) crystals

Contact Info

Product

Resources

About

Optical Properties of n‐Type Bi_2–xIn_xTe₃ Single Crystal

Point defects in M_{2 – x}In_xTe₃ (M = Sb or Bi) crystals