We report the observation of a clear single-mode instability threshold in continuous-wave Fabry-Perot quantum cascade lasers (QCLs). The instability is characterized by the appearance of sidebands separated by tens of free spectral ranges (FSR) from the first lasing mode, at a pump current not much higher than the lasing threshold. As the current is increased, higher-order sidebands appear that preserve the initial spacing, and the spectra are suggestive of harmonically phase-locked waveforms. We present a theory of the instability that applies to all homogeneously broadened standing-wave lasers. The low instability threshold and the large sideband spacing can be explained by the combination of an unclamped, incoherent Lorentzian gain due to the population grating, and a coherent parametric gain caused by temporal population pulsations that changes the spectral gain line shape. The parametric term suppresses the gain of sidebands whose separation is much smaller than the reciprocal gain recovery time, while enhancing the gain of more distant sidebands. The large gain recovery frequency of the QCL compared to the FSR is essential to observe this parametric effect, which is responsible for the multiple-FSR sideband separation. We predict that by tuning the strength of the incoherent gain contribution, for example by engineering the modal overlap factors and the carrier diffusion, both amplitude-modulated (AM) or frequency-modulated emission can be achieved from QCLs. We provide initial evidence of an AM waveform emitted by a QCL with highly asymmetric facet reflectivities, thereby opening a promising route to ultrashort pulse generation in the mid-infrared. Together, the experiments and theory clarify a deep connection between parametric oscillation in optically pumped microresonators and the single-mode instability of lasers, tying together literature from the last 60 years.

Bifunctional active regions, capable of light generation and detection at the same wavelength, allow a straightforward realization of the integrated mid-infrared photonics for sensing applications. Here, we present a high performance bifunctional device for 8 μm capable of 1 W single facet continuous wave emission at 15 °C. Apart from the general performance benefits, this enables sensing techniques which rely on continuous wave operation, for example, heterodyne detection, to be realized within a monolithic platform and demonstrates that bifunctional operation can be realized at longer wavelength, where wavelength matching becomes increasingly difficult and that the price to be paid in terms of performance is negligible. In laser operation, the device has the same or higher efficiency compared to the best lattice-matched QCLs without same wavelength detection capability, which is only 30% below the record achieved with strained material at this wavelength.

We have demonstrated active coherent beam combination (CBC) of up to 218 semiconductor amplifiers with 38.5 W cw output using up to eleven one-dimensional 21-element individually addressable diode amplifier arrays operating at 960 nm. The amplifier array elements are slab-coupled-optical-waveguide semiconductor amplifiers (SCOWAs) set up in a master-oscillator-power-amplifier configuration. Diffractive optical elements divide the master-oscillator beam to seed multiple arrays of SCOWAs. A SCOWA was phase actuated by adjusting the drive current to each element and controlled using a stochastic-parallel-gradient-descent (SPGD) algorithm for the active CBC. The SPGD is a hill-climbing algorithm that maximizes on-axis intensity in the far field, providing phase locking without needing a reference beam.

Articles you may be interested inFacet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers J. Appl. Phys. 93, 1848 (2003); 10.1063/1.1531839 High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser J. Appl. Phys. 83, 5561 (1998); 10.1063/1.367390 Highpower operation of strained InGaAs/AlGaAs single quantum well lasers Appl. Phys. Lett. 59, 2642 (1991); 10.1063/1.105924 Highpower conversion efficiency in a strained InGaAs/AlGaAs quantum well laser Continuous, highpower operation of a strained InGaAs/AlGaAs quantum well laser

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We demonstrate 35 W output peak power with M2 approximately 1.35 in both dimensions from a 100 element, 100 microm pitch slab-coupled optical waveguide laser diode array using wavelength beam combining.

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