In this paper, indium (In)‐rich second‐phase particles are observed in InP crystals, which is induced by the loss of phosphorus (P) during polycrystalline melting. Their characterizations reveal that the size of these In‐rich particles is 200 nm–20 µm. The dislocation structure surrounding the second‐phase particle and its formation is explained by the model of prismatic dislocation loop. The indium‐rich second‐phase particles could be eliminated under P‐rich condition by a rapid in situ P injection before crystal growth. Excessive P injection will lead to the formation of P pores with internal P deposits. The optimal injection value is given to eliminate the defects.
The SEM images show different scale In‐rich inclusions. Growth rate dispersion effect and initial morphologies of the In‐rich droplets have an obvious effect on the final shape of the inclusions. Dislocation enrichment surrounding the inclusions is mainly contributed to the volume expansion of liquid‐solid phase transition and the different of the thermal expansion coefficient.
(Picture: S.J. Wang et al., pp. 668–675, in this issue)
Submicron, micron and millimeter‐scale In‐rich inclusions with different polyhedral morphologies are observed, which are directionally embedded in the InP matrix along <011> direction. The arrangement direction and morphological change of the In‐rich inclusions at different scales are investigated to reveal their morphology evolution. The relative size of the facets ({100} and {111}P/In) bounding the polyhedral In‐rich inclusions is different from the reported results in other crystals, especially when the size of In‐rich inclusions is up to millimeter‐scale. The growth rate dispersion effect and the initial morphologies of the In‐rich droplets have an obvious effect on the final shape of the In‐rich inclusions. Dislocation enrichment surrounding the In‐rich inclusion is observed, which is contributed to the volume expansion of liquid‐solid phase transition and the difference of the thermal expansion coefficient and thermal conductivity between In‐rich droplet and InP matrix. The size and shape of the dislocation enriched region are closely related to the size and shape of the originating In‐rich droplet and the growth condition.
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