Equations are proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in cadmium vapor at different temperatures. The equilibrium constants for the formation of ( )defect complexes and antisite defects are calculated. An analytical expression is derived for the cadmium partial pressure corresponding to a type conversion. The conditions are established for producing n -and p -type CdTe 〈 Cl 〉 crystals with controlled carrier concentration. Cl Te + V Cd 2-Te Cd 2+
Models describing point defects in chromium doped lead telluride crystals and in the solid solutions PbTe-CrTe and PbTe-Cr 3 Te 4 have been developed. Based on the proposed quasi-chemical formulae, the dependence of the concentration of defects and free carriers, and the Hall concentration of current carriers, on the content of dopant and the deviation from PbTe stoichiometry, have been calculated. The mechanisms of doping and solid solution formation have been analyzed.
Generalized quasi-chemical formula for ZnX crystals (X = S, Se) with O and Cu admixtures, taking into account both intrinsic point defects and complexes formed with the doping elements, are proposed. The dependence of the concentration of defects and the Hall concentration of the current carriers on the content of the Cu doping agent was calculated for different values of residual oxygen concentration both for stoichiometric zinc chalcogenides and for n-and p-ZnX. The role of copper and oxygen in the formation of the electronic subsystem of the ZnX crystals and in the realization of thermodynamic p-n transitions was investigated. It is shown that if [O] > [Cu], for crystals with n-type conductivity " Zn ' ' Zn i X
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