Modeling of Point Defects in Cl-Doped CdTe Crystals Annealed in Cd Vapor

Abstract

Equations are proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in cadmium vapor at different temperatures. The equilibrium constants for the formation of ( )defect complexes and antisite defects are calculated. An analytical expression is derived for the cadmium partial pressure corresponding to a type conversion. The conditions are established for producing n -and p -type CdTe 〈 Cl 〉 crystals with controlled carrier concentration. Cl Te + V Cd 2-Te Cd 2+