We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.
Reactive rf planar magnetron sputtering has been used at substrate temperatures below 300 °C to deposit highly oriented piezoelectric AlN films on silicon for surface acoustic wave device applications. The substrates were (100)-oriented, n-type silicon with and without a thermally grown oxide. Several new AlM-on-silicon surface acoustic wave devices were fabricated and tested. The devices reported herein include two-port delay lines, degenerate monolithic convolvers, and two-port surface acoustic wave resonators utilizing metal strip reflector arrays.
We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.
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