Using
dynamic oblique angle deposition with substrate rotation,
we showed that single crystal porous Cu(100) films in the form of
spirals with an arm diameter ranging from 20 to 50 nm and a spiral
diameter ranging from 100 to 150 nm can be epitaxially grown on hydrogen
terminated single crystal Si(100) substrate. The epitaxial relationships
are (100)Cu//(100)Si in the out-of-plane orientation
and [010]Cu//[011]Si in the in-plane orientation.
The X-ray pole figure shows that the epitaxial Cu spirals possess
symmetric and weak twins, in contrast to the asymmetric and strong
twins observed in slanted nanorods deposited on Si(100) under stationary
oblique angle deposition. These films have potential applications
in sensors, catalysts, and energy conversion devices.
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