Results are reported on the Zintl phase material, K4In4Sb6, with respect to laser ablation and subsequent laser ionization/removal processes. A 308 nm laser pulse is used to ablate the Zintl compound, while a second laser ionizes ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm, selective ionization and removal of the potassium is clearly demonstrated. Such a strategy takes advantage of the different ionization potentials of K, In, and Sb, and implications for possible applications of this research to film growth are discussed.
We present results on the laser-induced photochemistry, abbtion, and deposition of a variety of precursor compounds used for Ill-V semiconducu growth. With compounds such as monoethylarsine, triethylarsenic, and triethylgaffium, our efforts are focused on using lasers to generate and detect atomic hydrogen, a species that is known to be a good radical scavenger in certain 111-V semiconductor growth environments. We also present results on the laser ablation of inorganic salts that may be useful as recurss for ffl-V thin-film growth. Here, K3GaA&j and K2GaSb are irradiated with various excimer laser wavelengths, and we report on the ablation and deposition chemistry induced by such radiation. The prognosis for viable film growth using this approach is also discussed. Finally, recent efforts involving the photochemistry and subsequent deposition characteristics of a Pt-containing organometallic compound, CHPt(CH3), are presented.Recent years have witnessed significant improvement in the fabrication of ffl-V semicondtxtor materials. Not only are improvements in the production of semiconductor compounds such as GaAs, AIGaAs, and InP expected, but there is increasing pressure to reduce or eliminate the use of important (but highly toxic) gases such as AsH and PH3 in the production processes. The feasibility of using alternative arsenic sources is sctively being siudied by the semicondtxtor communityJ7 One promising area being vigorously pursued involves the use of main group organometaflic complexes such as triethylarsenic (TEAs), monoethylarsine (MEAs), tertiarybutylarsine (TBAs), and phenylarsine (PhAs). These compounds are liquids and thus safer to handle than gaseous arsine. Unfortunately, these compounds contain carbon that can appear in the semiconductor material itself. To help reduce this prthlem, we use lasers to generate and detect atomic hydrogen, a species that is known to be a good radical scavenger in many ffl-V growth environments. As will be discussed, we have already made progress on understanding laser-initiated H-atom production in many group ifi and group V systems.Investigating the photochemistry and related growth behavior of arsine-alternative compounds such as TEAs and MEAs constitutes one of our major research thrusts. Mother direction--one previously over1ooked-involves the laser ablation and re-deposition of inorganic salts that are potential precursors for Ill-V film growth. Here, Zinti-phase compounds such as K3GaAsj are iridiated with excimer laser radiation, and we investigate fflV film growth using this approach. Other 111-V precursor compounds such as K2GaSb4 are also already being studied. A number ofl-I11-V and 11-ffl-V ternary Zinti phase materials have been synthesized and structurally characterized. These materials are attractive as semiconduct precursors for several reasons: 1) they can be Obtained ifl very high purity, 2) the ratio offfl-V elements can be varied by changing the group I/H cation, and 3) they are solids with very low vapor pressure, reducing the risk of exposure f...
Experimental results are reported on the I–III–V Zintl compounds Rb⋅Ga⋅Sb, K3Ga3As4, and K4In4As6 with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I–III–V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of Rb⋅Ga⋅Sb) and at 266 nm (in the case of K3Ga3As4 and K4In4As6), selective gas-phase ionization and removal of the group I elements is clearly demonstrated.
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