A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than 150°C. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than 150°C. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip‐chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a 20 μm pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at 130°C.
Laser‐assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single‐tier LAB process for 3D through‐silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single‐tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu‐Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.
TSV chips were designed and fabricated to investigate the effects of the types of the stacking process on the manufacturability. Two processes were compared: thermocompression and laser bonding. The pitch of UBMs, solder bumps, and TSVs were 50μm. A fluxing underfill was developed and used as a pre-applied underfill during the stacking process. The bonding profiles and the solder joint morphology based on the thermocompression and the laser bonding were compared.
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