We have fabricated two metal/double insulator/metal diodes using a sputtering system and atomic layer deposition. Here, we show metal/double insulator/metal diode applied as a switch element. The diode exhibits good rectifying characteristics at room temperature. We used the electrode material with Pt and insulators were HfO2/ZrO2 and NiO/ZnO each. The devices were fabricated using the lithographic system and top electrode sizes were 30 µm x 30 µ;m. The double insulator diode produces an enhanced nonlinearity by incorporating two adjacent oxides instead of the single oxide layer of the MIM diode. In the double insulator diode the mode of tunneling under positive applied biases can be made different from that under negative applied biases resulting in improved asymmetry.
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