High-resolution noncontact atomic force microscopy of SiO2 reveals previously unresolved roughness at the few-nm length scale, and scanning tunneling microscopy of graphene on SiO2 shows graphene to be slightly smoother than the supporting SiO2 substrate. A quantitative energetic analysis explains the observed roughness of graphene on SiO2 as extrinsic, and a natural result of highly conformal adhesion. Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.

Kelvin probe microscopy in ultrahigh vacuum is used to image the local electrostatic potential fluctuations above hexagonal boron nitride (h-BN) and SiO2, common substrates for graphene. Results are compared to a model of randomly distributed charges in a two-dimensional (2D) plane. For SiO2, the results are well modeled by 2D charge densities ranging from 0.24 to 2.7 × 10(11) cm(-2), while h-BN displays potential fluctuations 1-2 orders of magnitude lower than SiO2, consistent with the improvement in charge carrier mobility for graphene on h-BN compared to SiO2. Electron beam exposure of SiO2 increases the charge density fluctuations, creating long-lived metastable charge populations of ~2 × 10(11) cm(-2) at room temperature, which can be reversed by heating.

An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.

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Domain boundaries are hypothesized to play a role in the crystalline to amorphous transition. Here we examine domain boundary structures in comparison to crystalline and amorphous structures in bilayer silica grown on Ru(0 0 0 1). Atomically resolved scanning probe microscopy data of boundaries in crystalline bilayer films are analyzed to determine structural motifs. A rich variety of boundary structures including rotational, closed-loop, antiphase, and complex boundaries are identified. Repeating units with ring sizes of 558 and 57 form the two most common domain boundary types. Quantitative metrics are utilized to assess the structural composition and degree of order for the chemically equivalent crystalline, domain boundary, and amorphous structures. It is found that domain boundaries in the crystalline phase show similarities to the amorphous phase in their ring statistics and, in some cases, in terms of the observed ring neighborhoods. However, by assessing order and periodicity, domain boundaries are shown to be distinct from the glassy state. The role of the Ru(0 0 0 1) substrate in influencing grain boundary structure is also discussed.

The growth and microscopic characterization of two-dimensional germania films is presented. Germanium oxide monolayer films were grown on Ru(0001) by physical vapor deposition and subsequent annealing in oxygen. We obtain a comprehensive image of the germania film structure by combining intensity-voltage low-energy electron diffraction (I/V-LEED) and ab initio density functional theory (DFT) analysis with atomic-resolution scanning tunneling microscopy (STM) imaging. For benchmarking purposes, the bare Ru(0001) substrate and the (2 × 2)3O covered Ru(0001) were analyzed with I/V-LEED with respect to previous reports. STM topographic images of the germania film reveal a hexagonal network where the oxygen and germanium atom positions appear in different imaging contrasts. For quantitative LEED, the best agreement has been achieved with DFT structures where the germanium atoms are located preferentially on the top and fcc hollow sites of the Ru(0001) substrate. Moreover, in these atomically flat germania films, local site geometries, i.e., tetrahedral building blocks, ring structures, and domain boundaries, have been identified, indicating possible pathways towards two-dimensional amorphous networks.

The detailed structure of silica and germania films supported on Ru(0001) metal substrates are compared to each other. Surface science techniques together with density functional theory calculations have been used to gain insights into the atomic arrangement of these prominent glass-forming materials. The monolayer films of these materials both show predominantly crystalline hexagonal lattices with characteristic domain boundary structures. For the germania monolayer films a large variety of ring elements within domain boundaries have been observed. Density functional calculations predict stronger interaction with the metal substrate for bilayer germania as compared to bilayer silica films. Scanning tunneling microscopy images with atomically resolved structural features have given access to silica and germania bilayer film structures. Both bilayer films form characteristic amorphous ring structures. However, the germania bilayer films appear to be more corrugated, pointing to a stronger interaction with the metal support thus giving rise to slightly different connectivity rules.

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