Undoped hydrogenated microcrystalline Ge (µc-Ge:H) films grown by plasma-enhanced chemical vapor deposition reveal high concentration of free holes (>1018 cm-3) when the films exhibit a high crystalline volume fraction. ESR and Hall-effect experiments suggest that the acceptor states arise from the native dangling bond defects at Ge crystalline grain boundaries. It is demonstrated that an intentional oxygen incorporation during the µc-Ge:H deposition reduces the hole concentration by two orders of magnitude. Furthermore, µc-Si1-x
Ge
x
:H (x=0.1–0.3) alloy p–i–n solar cells show marked improvements in photocarrier collection properties upon oxygen incorporation into the i-layer in the order of 5×1018–1020 cm-3. These findings are explained by the effect of the compensation of the negatively charged Ge dangling bonds by oxygen donors.
The decomposition process of chlorofluorocarbons by water plasma was investigated by thermodynamic analysis. The optimized point for maximizing the fraction of CFCS is nccIsF-nH = 1 : 2. Conditions with more CFCS than at this point lead to the recombination hf CFcs. With more 0,. CI, is produced. The energy needed to heat water and C F C l l to 10000 K is 2.4 M J mol-'. The ionization of the mixture begins at 9000 K. which is 1000 K lower than Ar plasma.
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