Combinatorial optimization problems are ubiquitous but difficult to solve. Hardware devices for these problems have recently been developed by various approaches, including quantum computers. Inspired by recently proposed quantum adiabatic optimization using a nonlinear oscillator network, we propose a new optimization algorithm simulating adiabatic evolutions of classical nonlinear Hamiltonian systems exhibiting bifurcation phenomena, which we call simulated bifurcation (SB). SB is based on adiabatic and chaotic (ergodic) evolutions of nonlinear Hamiltonian systems. SB is also suitable for parallel computing because of its simultaneous updating. Implementing SB with a field-programmable gate array, we demonstrate that the SB machine can obtain good approximate solutions of an all-to-all connected 2000-node MAX-CUT problem in 0.5 ms, which is about 10 times faster than a state-of-the-art laser-based machine called a coherent Ising machine. SB will accelerate large-scale combinatorial optimization harnessing digital computer technologies and also offer a new application of computational and mathematical physics.

Quickly obtaining optimal solutions of combinatorial optimization problems has tremendous value but is extremely difficult. Thus, various kinds of machines specially designed for combinatorial optimization have recently been proposed and developed. Toward the realization of higher-performance machines, here, we propose an algorithm based on classical mechanics, which is obtained by modifying a previously proposed algorithm called simulated bifurcation. Our proposed algorithm allows us to achieve not only high speed by parallel computing but also high solution accuracy for problems with up to one million binary variables. Benchmarking shows that our machine based on the algorithm achieves high performance compared to recently developed machines, including a quantum annealer using a superconducting circuit, a coherent Ising machine using a laser, and digital processors based on various algorithms. Thus, high-performance combinatorial optimization is realized by massively parallel implementations of the proposed algorithm based on classical mechanics.

We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near SiO(2)/Si the interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.

The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation were compared, and it was clarified that the damage that may compensate the activated $n$-type dopants has no relationship with the activation of P in Ge.Comment: 6 pages, 4 figure

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