New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon

Abstract

We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near SiO(2)/Si the interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.

Interfacial reaction-dominated full oxidation of 5 nm diameter silicon nanowires

“…This has been observed in a number of previous studies as well. [27][28][29] Figure 4(c) shows the evolution of the residual stress in the oxide layer over time. A negative sign for the stress denotes compressive stress and vice versa.…”

Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review

“…These phenomena are most likely due to slow diffusion of interstitial O 2 in a stressed a-SiO 2 layer near the silicon-oxide interface, which is formed by the volume expansion that accompanies the oxidation [39,42,43]. Models that introduce such a modified a-SiO 2 layer with slow O 2 diffusion explain the actual growth kinetics well [44,45]. On the other hand, X-ray reflectivity observations have evidenced the presence of compressed a-SiO 2 layer with density $2.4 g cm À3 ($2.2 g cm À3 for normal aSiO 2 ) [46,47].…”

Potential energy landscape of an interstitialO2molecule in aSiO2film near theOhta1, Watanabe2, Ohdomari3 2008Phys. Rev. BSelf Cite150120View full textAdd to dashboardCite

“…5 is very similar to that supposed in the new kinetic model of the thermal oxidation of silicon. 2 Fig. 8 shows the potential profile proposed in Ref.…”