This publication presents results of experimental investigation and thermodynamic calculation of the ternary Ge-In-Sb system. Isothermal section of the Ge-In-Sb system at 300 °C has been extrapolated using optimized thermodynamic parameters for the constitutive binary systems. Microstructure analysis was carried out by light microscope, scanning electron microscopy with energy dispersive spectrometry and X-ray powder diffraction methods and obtained results were compared with predicted phase equilibria. Hardness of selected alloys annealed at 300 °C was measured using Vickers microhardness test and Brinell hardness test. Electrical conductivity of a number of alloys annealed at 300 °C was experimentally determined. Good overall agreement between experimental and calculated values was obtained.
The ternary Bi-Ga-Sb system is a potential soldering material. The gallium-based alloy systems are the subject of numerous investigations due to the constant interest of the semiconductor industry. For a more complete characterization of the ternary Bi-Ga-Sb system, alloys from the three vertical sections were investigated using microstructural analysis as well as electrical conductivity and Brinell hardness measurements. The microstructures of the alloys were investigated by light microscopy and scanning electronic microscopy equipped with energy dispersive spectrometry. Isolines of electrical conductivity and hardness for the entire Bi-Ga-Sb system were calculated using regression models. In addition, a thermodynamic assessment of the system has been carried out by calculation of the isothermal section at 100 °C and by description using the CALPHAD method. Experimental and analytical results were found to be in good agreement.
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