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We present the polarization effect on surface plasmonic polariton (SPP) modes in plasmonic waveguides under high-intensity radiation via the Floquet engineering methods. First, we analyze the strong light coupling to the metallic system using a nonperturbative procedure. Then, we describe the behavior of dressed metal fermion system using the Floquet state solutions. Furthermore, we examine the impurity scattering effects on electron transport in disordered plasmonic metals using the generalized Floquet-Fermi golden rule. We also show that we can reduce the SPP propagation losses in plasmonic metals by applying a dressing field. We introduce a new figure of merit to compare the performance of popular plasmonic metals, assessing their performance enhancements under two different polarization types of dressing fields. Our study can be applied to accurately interpret the usage of strong external radiation as a tool in quantum plasmonic circuits and devices.

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The ability to finely control the surface plasmon polariton (SPP) modes of plasmonic waveguides unveils many potential applications in nanophotonics. This work presents a comprehensive theoretical framework for predicting the propagation characteristics of SPP modes at a Schottky junction exposed to a dressing electromagnetic field. Applying the general linear response theory towards a periodically driven many-body quantum system, we obtain an explicit expression for the dielectric function of the dressed metal. Our study demonstrates that the dressing field can be used to alter and fine-tune the electron damping factor. By doing so, the SPP propagation length could be controlled and enhanced by appropriately selecting the intensity, frequency and polarization type of the external dressing field. Consequently, the developed theory reveals an unexplored mechanism for enhancing the SPP propagation length without altering other SPP characteristics. The proposed improvements are compatible with existing SPP-based waveguiding technologies and could lead to breakthroughs in the design and fabrication of state-of-the-art nanoscale integrated circuits and devices in the near future.