2022
DOI: 10.1103/physrevb.105.035430
|View full text |Cite
|
Sign up to set email alerts
|

Generalized model for the charge transport properties of dressed quantum Hall systems

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
9
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

3
2

Authors

Journals

citations
Cited by 8 publications
(9 citation statements)
references
References 93 publications
0
9
0
Order By: Relevance
“…When static uniform electric field (F s ) is applied along QWr's axis, it breaks the confining potential symmetry which in turn leads to mixing of symmetric and antisymmetric electron and hole basis states in equation (24). Consequently, neighboring energy levels of different parities for F s = 0, now for F s ̸ = 0, may mutually interact developing the avoided crossings in energy spectra due to static Stark effect what is shown in figure 7(a).…”
Section: Static and Dynamical Stark Effects In Narrow Qwrmentioning
confidence: 99%
See 1 more Smart Citation
“…When static uniform electric field (F s ) is applied along QWr's axis, it breaks the confining potential symmetry which in turn leads to mixing of symmetric and antisymmetric electron and hole basis states in equation (24). Consequently, neighboring energy levels of different parities for F s = 0, now for F s ̸ = 0, may mutually interact developing the avoided crossings in energy spectra due to static Stark effect what is shown in figure 7(a).…”
Section: Static and Dynamical Stark Effects In Narrow Qwrmentioning
confidence: 99%
“…In two-dimensional materials hosting Dirac fermions, the offresonant circularly polarized laser light modify the energy band structure by flattening the bands [15,16] and opening the non-trivial topological gaps [17][18][19][20][21]. Such metal-topological insulator phase transitions dramatically changes charge density and the character of electron transport due to formation of the edge states and the light helicity dependent valley polarization [22][23][24][25], while an artificial gauge field generated by circularly polarized light in a momentum space drives the electrons giving contribution to anomalous Hall effect or in materials with prominent spin-orbit interactions to spin Hall effect [26][27][28][29][30]. For the same reason the persistent currents without external bias are observed due to the photogalvanic effect while for much stronger laser intensities the Dirac fermions can be temporarily spatially localized [31,32].…”
Section: Introductionmentioning
confidence: 99%
“…By appropriately choosing the drive frequency, amplitude, and polarization, periodic driving can be used to change the topological features of electronic system's quantum states, which govern the evolution of electrons in both space and time [57]. This opens up the possibility of altering the physical properties of quantum many-body systems, including two-dimensional (2D) materials such as graphene and transition metal dichalcogenides, as well as threedimensional (3D) topological insulators and thin metal films [58][59][60]. In these novel non-equilibrium quantum phenomena, the matter and light are considered as constituent elements of a composite quantum system known as a dressed system.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, applying light-matter interaction to manipulate solid-state systems has become a central focus of research. This approach has gained significant interest due to its potential to induce novel quantum phases that are not achievable in equilibrium [39][40][41]. By employing powerful periodic drives, such as ultra-fast optical pulses, one can modify the quantum state of electronic or atomic degrees of freedom and influence the underlying microscopic interactions.…”
Section: Introductionmentioning
confidence: 99%
“…However, a comprehensive exploration of its implementation in nanoscale wireless communication for data demodulation techniques remains a subject of further inquiry. Thus, this study employs the Floquet-Drude conductivity expression and the Floquet-Fermi golden rule [40,42] to investigate the correlation between the frequency of the dressing field and the longitudinal conductivity of a two-dimensional (2D) semiconductor under illumination. Subsequently, we conduct an in-depth examination of utilizing the Floquet formalism in information processing techniques focused on chip-scale wireless communication.…”
Section: Introductionmentioning
confidence: 99%