The possibility of S-doping MBE-GaSb using H2S gas has been demonstrated. The sulfer atoms are thermally dissociated from the H2S gas, and are adsorbed at Sb vacancy sites. The S sticking coefficient depends on the Sb coverage. The electron mobility of S-doped GaSb is relatively low. This may be caused by a high compensation ratio and lattice mismatch between the GaAs substrate and the GaSb film. From the experimental results, the activation energy of the S-donor is estimated to be about 75 meV.
Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher t,han 400 "C. The surface gives a C(2 x 6) structure under Sb stabilized conditions. Undoped X1Sb is p-type with resistivities of lo2 t,o lo3 ncm. Then, GaSb films are grown on AISb/GaSs. It, can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues a t the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch.JIittels Molekularstrahlepitnxie (JIBE) werden einkristalline AISb-Schichten auf GaAs-Substrate erfolgreich bei Temperaturen oberhalb 400 "C aufgebracht. Die Oberfliiche ergibt eine C(2 X 6)-Struktur unter Sb-Stabilit5tsbedingiingen. Undotiertes AlSb ist p-leitend mit Leitfiihigkeiten von lo2 bis 103 ncm. AuBerdem werden GaSb-Schichten auf AISb/GaAs aufgebracht. Mittels RHEED-Messungen wird gezeigt, daB die AlSb-GaSb-Grenzflache sehr glatt ist und das Schichtwachstum an der Grenzflache kontinuierlich ist. Die Herst,ellung dieser Struktur verbessert die GaSb-Eigenschaften gegenuber direkt auf GaAs aufgebrachten GaSb-Schicht,en durch Relaxn.tion der Gitterfehlanpassung.
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