An appropriate solution is suggested for synthesizing wafer-scale, continuous, and stoichiometric MoS2 layers with spatial homogeneity at the low temperature of 450 °C. It is also demonstrated that the MoS2 -based visible-light photodetector arrays are both fabricated on 4 inch SiO2 /Si wafer and polyimide films, revealing 100% active devices with a narrow photocurrent distribution and excellent mechanical durability.

Since the introduction of inorganic ZnO, typically in the form of nanoparticles (NPs), as an electron transport layer (ETL) material, the device performance of electrically driven colloidal quantum dot-light-emitting diodes (QLEDs), in particular, with either Cd-based II−VI or non-Cd-based III−V (e.g., InP) quantum dot (QD) visible-emitters, has been rapidly improved. In the present work, three Zn 1−x Mg x O (x = 0, 0.05, 0.1) NPs that possess different electronic energy levels are applied as ETLs of solution-processed, multilayered I−III−VI type QLEDs that consist of a Cu−In−S, Cu−In−Ga−S, or Zn−Cu−In−S QD emitting layer (EML) plus a common organic hole transport layer of poly(9-vinlycarbazole). The luminance and efficiency of those QLEDs are found to be strongly dependent on the type of ZnMgO NP ETL, resulting in the substantial improvements by means of alloyed ZnMgO ETL versus pure ZnO one. Ultraviolet photoelectron and absorption spectroscopic measurements on a series of ZnMgO NP films reveal that their conduction band minimum (CBM) levels are systematically closer to the vacuum level with increasing Mg content. Therefore, such beneficial effects of alloyed NPs on QLED performance are primarily ascribed to the reduced electron injection barrier between ETL and QD EML that is enabled by the upshift of their CBM levels.

The insufficient strategies to improve electronic transport, the poor intrinsic chemical activities, and limited active site densities are all factors inhibiting MXenes from their electrocatalytic applications in terms of hydrogen production. Herein, these limitations are overcome by tunable interfacial chemical doping with a nonmetallic electron donor, i.e., phosphorization through simple heattreatment with triphenyl phosphine (TPP) as a phosphorous source in 2D vanadium carbide MXene. Through this process, substitution, and/or doping of phosphorous occurs at the basal plane with controllable chemical compositions (3.83-4.84 at%). Density functional theory (DFT) calculations demonstrate that the PC bonding shows the lowest surface formation energy (ΔG Surf ) of 0.027 eV Å −2 and Gibbs free energy (ΔG H ) of -0.02 eV, whereas others such as P-oxide and PV (phosphide) show highly positive ΔG H . The P3-V 2 CT x treated at 500 °C shows the highest concentration of PC bonds, and exhibits the lowest onset overpotential of -28 mV, Tafel slope of 74 mV dec −1 , and the smallest overpotential of −163 mV at 10 mA cm −2 in 0.5 m H 2 SO 4 . The first strategy for electrocatalytically accelerating hydrogen evolution activity of V 2 CT x MXene by simple interfacial doping will open the possibility of manipulating the catalytic performance of various MXenes.

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Wearable strain-pressure sensors for detecting electrical signals generated by human activities are being widely investigated because of their diverse potential applications, from observing human motion to health monitoring. In this study, we fabricated reduced graphene oxide (rGO)/single-wall carbon nanotube (SWCNT) hybrid fabric-based strain-pressure sensors using a simple solution process. The structural and chemical properties of the rGO/SWCNT fabrics were characterized using scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopy (XPS). Complex networks containing rGO and SWCNTs were homogeneously formed on the cotton fabric. The sensing performance of the devices was evaluated by measuring the effects of bending strain and pressure. When the CNT content was increased, the change in relative resistance decreased, while durability was significantly improved. The rGO/SWCNT (0.04 wt %) fabric sensor showed particularly high mechanical stability and flexibility during 100 000 bending tests at the extremely small bending radius of 3.5 mm (11.6% bending strain). Moreover, the rGO/SWCNT fabric device exhibited excellent water resistant properties after 10 washing tests due to its hydrophobic nature. Finally, we demonstrated a fabric-sensor-based motion glove and confirmed its practical applicability.