Variation within genes has important implications for all biological traits. We identified 3899 single nucleotide polymorphisms (SNPs) that were present within 313 genes from 82 unrelated individuals of diverse ancestry, and we organized the SNPs into 4304 different haplotypes. Each gene had several variable SNPs and haplotypes that were present in all populations, as well as a number that were population-specific. Pairs of SNPs exhibited variability in the degree of linkage disequilibrium that was a function of their location within a gene, distance from each other, population distribution, and population frequency. Haplotypes generally had more information content (heterozygosity) than did individual SNPs. Our analysis of the pattern of variation strongly supports the recent expansion of the human population.

An appropriate solution is suggested for synthesizing wafer-scale, continuous, and stoichiometric MoS2 layers with spatial homogeneity at the low temperature of 450 °C. It is also demonstrated that the MoS2 -based visible-light photodetector arrays are both fabricated on 4 inch SiO2 /Si wafer and polyimide films, revealing 100% active devices with a narrow photocurrent distribution and excellent mechanical durability.

We report the first unambiguous ferroelectric properties of ultra-thin-walled Pb(Zr,Ti)O 3 (PZT) nanotube arrays, each with 5 nm thick walls and outer diameters of 50 nm. Ferroelectric switching behavior with well-saturated hysteresis loops is observed in these ferroelectric PZT nanotubes with P r and E c values of about 1.5 microC cm (-2) and 86 kV cm (-1), respectively, for a maximum applied electric field of 400 kV cm (-1). These PZT nanotube arrays (10 (12) nanotubes cm (-2)) might provide a competitive approach toward the development of three-dimensional capacitors for the terabyte ferroelectric random access memory.

A facile methodology for the large-scale production of layer-controlled MoS layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS layers by simply adjusting the concentration of (NH ) MoS . Additionally, the capability of the MoS for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS -based field effect transistors exhibit unipolar n-channel transistor behavior with electron mobility of 0.6 cm V s and an on-off ratio of ≈10³. The MoS -based visible-light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W . Moreover, the MoS layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec . Based on these results, it is envisaged that the cost-effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor-based multifaceted applications.

This study theoretically and experimentally investigates the transmission properties of a metamaterial slab comprised of two layers of metallic fish-scale structure arrays and a sandwiched dielectric layer. Calculations show that the asymmetric transmission can be tuned by varying the slab thickness, due to near-field interlayer coupling. The spatial evolution of the electric field indicates that the twist structure functions as a perfect polarization transformer at certain frequencies. Measured transmission spectra are in good agreement with calculated results when material dissipation is considered.

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large‐scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x )Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic‐level substitution combined with a solution‐based large‐area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large‐scale 2D TMD alloys are implemented. Se‐stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure‐phase MoS2 and MoSe2, are unambiguously achieved.

We propose a scheme for subwavelength electromagnetic diode by employing cascading nonlinear meta-atoms. One-way response is conceptually demonstrated on a microwave transmission line comprising of three metallic ring resonators acting as meta-atoms and a varactor as the nonlinear medium inclusion. Experiments show that our implementation can operate simultaneously as forward diode and backward diode at different frequencies. A transmission contrast of up to 14.7 dB was achieved between forward and backward transmission. Subwavelength size of our diode should be useful for miniaturization of integrated optical nanocircuits.

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