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Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb2S3)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb2S3-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of $$\sim 10\,{fJ}/n{m}^{3}$$ ~ 10 f J / n m 3 . Remarkably, Sb2S3 is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Lead-free perovskite (Bi 0.5 Na 0.5 ) 0.94 Ba 0.06 TiO 3 (BNBT06) was prepared by conventional ceramic fabrication technique at 1160 • C/3h in air atmosphere. The crystal structure, microstructure, dielectric, polarization, piezoelectric properties, and ac conductivity of the sample were studied. X-ray diffraction data confirmed the formation of a single phase tetragonal unit cell. Williamson-Hall plot was used to calculate the lattice strain and the apparent particle size. The experimental relative density of BNBT06 was found to be ∼96-97% of the theoretical one with an average grain size ∼4 μm. Room temperature dielectric constant and loss factor at 1 kHz were found to be equal to 781 and 0.085, respectively. Longitudinal piezoelectric charge coefficient of the poled sample under 2.5 kV/mm at 80 • C in silicone bath was found to be equal to 124 pC/N. Complex impedance and electric modulus spectroscopic analyses showed the dielectric relaxation in the material to be of non-Debye type. The Nyquist plots and conductivity studies showed the NTCR character of BNBT06. The correlated barrier hopping model (CBHM) as well as jump relaxation model (JRM) was found to successfully explain the mechanism of charge transport in BNBT06. The ac conductivity data were used to evaluate the minimum hopping length, apparent activation energy, and density of states at Fermi level.

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