Thermal Laser Stimulation (TLS) techniques have demonstrated their ability to detect and locate defects in integrated circuits (IC). Optical Beam Induced Resistance Change (OBIRCH) and all derivatives are based on the same physical principle: local laser heating of integrated circuits.The purpose of this paper is to synthesize the extensive work done in this area in order to highlight the essential physical principles. With this knowledge Dynamic Thermal Laser Stimulation (D-TLS) applications can then be tackled, optimizing parameters such as laser dwell time for sufficient heating. Finally, applications will be presented on 180nm, 120nm and 90nm, comparing the sensitivity of Dynamic Thermal Laser Stimulation with respect to light emission.
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