We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3mV/decade, and an on/off current ratio exceeding 105 in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient.

We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length.Silicon-based gate-all-around ͑GAA͒ nanowire transistors are considered promising alternatives to planar metaloxide-semiconductor field-effect transistors ͑MOSFETs͒ because of better gate bias control of electron channels and, thus, reduction of various short channel effects. 1,2 These nanowire devices provide another interesting opportunity since they are expected to have unique one-dimensional electron properties when their radius is small enough and scatterings are suppressed.Ballistic electrons do not go through inelastic scattering while traveling across the channel. Earlier, such perfect ballisticity and conductance quantization at cryogenic temperatures were achieved in patterned one-dimensional GaAs/ AlGaAs heterostructures. 3 Recently, transport in carbon nanotubes has exhibited such ballisticity at room temperature due to its one-dimensional nature with smaller inelastic scattering probability. 4 In conventional planar short channel MOSFETs, some of the carriers can pass the channel when they have large enough velocities. In this case, the ratio of the ballistic electrons over the total number of injected electrons is an important factor. 5 So far, not much experimental information has been obtained on such ballistic transport in recently developed three-dimensional ͑3D͒ MOSFETs even though 3D confinement 6 is expected to modify the electron mobilities ͑thus injection efficiencies͒ and energy relaxation mechanisms.In this letter, we report the electrical characteristics of 4 nm radius cylindrical GAA twin silicon nanowire MOSFETs ͑TSNWFETs͒ with various lengths ͑L's͒ ranging from 22 to 408 nm. We have observed strong overshoots in the low-bias transconductance ͑g m ͒ in the devices with L Ͻ 50 nm. We have analyzed this g m data by means of ballistic transport. The mean free path estimated by zero-field one-dimensional ͑1D͒ resistivity measured from the devices with various lengths is compared with the length scales at which the g m overshoot occurs. Figure 1 shows a schematic and a typical transmission electron microscope ͑TEM͒ image of our TSNWFETs fabricated by full complementary MOS ͑CMOS͒ processes. 1 The formation of the twin nanowires was accomplished by selective epitaxial growth of Si 0.77 Ge 0.23 / Si layers and subsequent removal of the SiGe layer. We performed an in situ steam generated ͑ISSG͒ process to grow gate oxide with a thickness of 3.5 nm. Then, the TiN gate material filling was completed. The TEM image clearly confirmed the circular, crystalline nanowire with ...

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The effect of transfer layer formation on friction performance was studied using a brake friction material containing 15 ingredients. Based on a base formulation, 13 friction material specimens containing different relative amounts of ingredients were produced and they were tested on gray iron disks using a small-scale friction tester. A non-destructive four-point probe technique to measure electrical resistance of the thin film was used to estimate the transfer layer thickness. Results showed that the transfer layer formation was highly dependent on the relative amount of ingredients in the friction material and temperature. Among various ingredients, solid lubricants and iron powders increased the transfer layer thickness but no apparent correlation between transfer layer thickness and the coefficient of friction was found. Strong influence from individual ingredients was observed, dominating the friction characteristics during sliding. On the other hand, the thick transfer layers on the disk surface tended to reduce the friction material wear and the amplitude of the friction coefficient oscillation during sliding.

Previously, well controlled silicon nanowires with different dNw's have been successfully demonstrated with Nanowire size (dNw) dependency of various electrical SONOS memory using subtle TSNWFET process [3]. In characteristics on gate all around Twin Silicon Nanowire this article, we will further investigate dNw dependency of MOSFET (TSNWFET) is investigated to understand overall intrinsic electrical characteristics of TSNWFET fabricated performance of nanowire transistor deeply. When dNw by previously matured process. decreases, current drivability (ION) normalized by