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Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage (4-20 V) has posed a major obstacle in the practical use of the NEM switch in low-power integrated circuits. To utilize the NEM switch widely as a core device component in ultralow power applications, the operation voltage needs to be reduced to 1 V or below. However, sub-1 V actuation has not yet been demonstrated because of fabrication difficulties and irreversible switching failure caused by surface adhesion. Here, we report the sub-1 V operation of a NEM switch through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique. This achievement is primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a NEM switch generated using a 'top-down' approach. Our structure and process can potentially be utilized in various nanogap-related applications, including NEM switch-based ultralow-power integrated circuits, NEM resonators, nanogap electrodes for scientific research and sensors.

No abstract

Microlens array (MLA) diffusers for light-emitting diode (LED) backlight systems have been developed. A high fill-factor photoresist mold for the MLA was fabricated using three-dimensional diffuser lithography, and the patterns were transferred to a nickel master mold for UV-curable polymer replication. The fabricated microlens had various paraboloidal profiles, and its aspect ratio was controlled from 1.0 to 2.1. The MLA diffuser showed a batwing radiation pattern with a radiation angle of 150 degrees. The fabricated MLA diffuser may greatly enhance the color-mixing characteristics of LED backlight systems and help reduce the number of LEDs required.

We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3mV/decade, and an on/off current ratio exceeding 105 in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient.