We demonstrate a SiC trench MOSFET with an integrated low Von unipolar heterojunction diode (MOSHJD). A region of the heterojunction diode (HJD) was fabricated in a trench with p+-type poly-crystalline silicon on an n--type epitaxial layer of 4H-SiC. The measured on-resistance (Ron) of the transistor action was 15 mΩcm2. The measured Von of the diode action was 2.2 V at a forward current density of 100 A/cm2. The fabrication process of the MOSHJD is simple. First, the trenches of the MOSFET region and the HJD region are formed simultaneously; then poly-crystalline silicon is deposited to form the gate electrode of the MOSFET region and the anode electrode of the HJD region at the same time.
This study investigates the characteristics of flow-field patterns generated by burst-mode actuation of a dielectric-barrier-discharge plasma actuator in quiescent air. Particle-image velocimetry and background-oriented schlieren measurements conducted over a wide range of burst-signal parameters show that there are three types of flow-field patterns. Type 1 is the wall-surface jet seen in continuous mode actuation; type 2 features periodical independent vortices traveling along the wall surface; type 3 features such vortices moving away from the surface. The vortex sizes in types 2 and 3 are proportional to the energy consumed in generating one vortex. When the time-averaged jet velocity estimated by the power consumption is used as the characteristic velocity in the nondimensional scaling law, the time profiles of the vortex location in the type 3 flow-field pattern collapse into a single line, independently of the burst frequency and ratio. However, in the initial phase, the nondimensional vortex-core motion is better described using the jet velocity in continuous-mode actuation as the characteristic velocity. The transitions of the flow-field pattern from type 1 to type 3 result from interference between cyclically generated vortices and depend on the inter-vortex distances and the energy consumed in generating one vortex.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.