Direct-cooled power module with a thick Cu heat spreader featuring a stress-suppressed structure for EV/HEV inverters

Numakura, Keiichiro; Emori, Kenta; Yoshino, Yusuke; Yasuaki, Hayami; Hayashi, Tetsuya

doi:10.1109/ecce.2016.7855049

Cited by 11 publications

(4 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Minimizing Lpara value for GaN devices is presented in [5]. Moreover, the packaging of the SiC power module by using new materials and cooling structures is presented in [6], [7], respectively. Comparison of using WBG devices for dc-dc converters is implemented in [8].…”

Section: Wide-bandgap Power Semiconductors For Electric Vehiclementioning

confidence: 99%

“…Low-temperature stress and high fault tolerance of SiC power modules are critical to apply immediately in hybrid EV which can operate with a single cooling loop (temperature > 105°C). To lower down temperature stress and improve reliability for fault tolerance of modules, it is necessary to use new materials and cooling structures to reduce overall thermal resistance (Rth), such as: using thick Cu heat spreader [6], double-sided direct-cooling technology [7]. To improve reliability for fault tolerance, it is necessary to lower down device ON-state resistance and switching loop Lpara of the packaging [9].…”

Section: The Packaging Of Sic Power Modulesmentioning

confidence: 99%

“…Authors in [6] investigated direct-cooled power module technologies to meet the need of lower Rth and stress relaxation. By placing a thick Copper (Cu) heat spreader under the SiC chip for lower Rth and using a thin closed Aluminum water jacket for the relaxation of stress, Rth is reduced by 34% from 1.515K/W to 1K/W, compared with common directcooled power modules.…”

Section: The Packaging Of Sic Power Modulesmentioning

confidence: 99%

See 2 more Smart Citations

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Thang

Trovão²,

et al. 2021

IEEE Veh. Technol. Mag.

View full text Add to dashboard Cite

In recent years, researchers have been attracted towards the application of Wide-Bandgap (WBG) power semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in Electric Vehicle (EV) applications. Their advantages over Silicon (Si) power semiconductors are lower power losses, higher switching frequencies and higher junction temperatures. Thus, the usage of WBG power semiconductor devices for EV power electronic systems is to improve EV efficiency, reliability, and mileage. However, these adoptions are still under challenges in terms of packaging and power converters design. In this paper, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, recent progress of different commercial WBG power semiconductor devices are reviewed and different solutions in order to solve the research and development challenges are evaluated.

show abstract

Section: Wide-bandgap Power Semiconductors For Electric Vehiclementioning

confidence: 99%

Section: The Packaging Of Sic Power Modulesmentioning

confidence: 99%

Section: The Packaging Of Sic Power Modulesmentioning

confidence: 99%

See 1 more Smart Citation

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Thang

Trovão²,

et al. 2021

IEEE Veh. Technol. Mag.

View full text Add to dashboard Cite

show abstract

“…For example, Numakura et al developed a power module cooling system with a Cu heat spreader that can reduce thermal resistance by 34%. 1 Solder is commonly used to integrate devices and heat spreaders; however, the solder-bonding layer limits the heat dissipation because of its low thermal conductivity (20-100 W/m•K at 300 K). Moreover, the soldering process requires high bonding temperature that can damage temperature-sensitive devices such as optical devices.…”

mentioning

confidence: 99%

Direct Bonding of an Electroformed Cu Substrate and Si Chip at Room Temperature under Atmospheric Conditions

Matsumae

Kurashima

Higurashi

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

A Cu-based heat spreader with a smooth Au bonding film was fabricated by electroforming to provide efficient cooling via direct bonding with the semiconductor. The Cu substrates were electroformed using Cu/Au and Cu/Ta/Au seed layers deposited on smooth SiO2/Si substrates; subsequently, they were mechanically stripped at the Au/SiO2 interface. The Cu substrates were directly bonded with Au-metallized Si chips in air after surface activation with argon plasma. When the Cu substrate was electroformed using the Cu/Au seed layer, Cu diffused through the Au film and CuO was generated on the stripped Au surface. Thus, the Cu substrate was insufficiently bonded to the Si chip as CuO increased the surface roughness and prevented intimate contact between the Au surfaces. Meanwhile, the Cu substrate electroformed using the Cu/Ta/Au seed layer had a smooth Au surface without Cu impurities because the Ta layer blocked the diffusion of Cu. Thus, it formed a strong bond with the Si chip, equivalent to the bulk strength of Si. It is expected that a Cu substrate electroformed on a Cu/Ta/Au seed layer has potential as a heat spreader that can directly bond with semiconductors at room temperature under atmospheric conditions.

show abstract

Ultra-thermostable embedded liquid cooling in SiC 3D packaging power modules of electric vehicles

Zhang

Zhao

et al. 2023

Energy Conversion and Management

View full text Add to dashboard Cite

Direct-cooled power module with a thick Cu heat spreader featuring a stress-suppressed structure for EV/HEV inverters

Cited by 11 publications

References 1 publication

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Direct Bonding of an Electroformed Cu Substrate and Si Chip at Room Temperature under Atmospheric Conditions

Ultra-thermostable embedded liquid cooling in SiC 3D packaging power modules of electric vehicles

Contact Info

Product

Resources

About